Search

In this paper, the optimal thickness of SiC film for an antireflection coating was determined by computer simulations using Lumerical FTDT and SCOUT software. The simulation was carried out for the SiC/MgF 2 system, where silicon carbide films were deposited at a magnetron power of 100, 150, 200, 250 W, while the thickness of the magnesium fluoride films remained unchanged and amounted to 130 nm. The simulation results showed that the optimal parameters for the synthesis of SiC antireflection layer are 100 W/50 nm. With these parameters, the reflection is less than 3% in the widest wavelength range of 475–1020 nm. The dependence of the physical properties of the synthesized films on the power of the magnetron is investigated. Using reflection and transmission spectroscopy it was experimentally revealed that a decrease in the magnetron power from 250 to 100 W leads to a decrease in the refractive index. According to our results the best antireflection effect can be achieved with SiC/MgF 2 coatings when SiC films are deposited at 100 W magnetron power. The reflectance spectra are consistent with the simulation spectra, especially in the 475–1020 nm range, where the surface reflects only 0.2–3.0% of the incident light. The obtained results are explained by the correlation between the structural properties, composition of amorphous silicon carbide films and antireflection properties. [Display omitted] • The simulation was carried out for the SiC/MgF 2 antireflection system. • The refractive indices remain directly dependent on the magnetron power. • A correlation has been revealed between SiC structural and antireflection properties. • A decrease in total number of Si–C bonds indicates the presence of nanopores. • The optimal parameters for the synthesis of SiC antireflection layer are 100 W/50 nm. [ABSTRACT FROM AUTHOR]

This paper examines how varying the thickness of the indium tin oxide (ITO) seed layer, ranging from 8 to 20 nm, impacts the optical, electrical, and structural properties of triple-layer transparent conductive oxide ITO/aluminum doped zinc oxide (AZO)/ITO. ITO and AZO films were deposited by DC and RF magnetron sputtering, respectively. The thickness and density of each layer were measured by X-ray reflectometry (XRR). X-ray diffraction showed that as the thickness of the ITO seed layer increased, both the average size of the crystallites and the volume of the crystalline phase in the AZO film also increased. Measurements of the electrical characteristics indicated a decrease in resistivity as the thickness of the ITO seed layer increased. This reduction is attributed to enhanced charge mobility, resulting from improved crystallinity. It has been shown that a 20-nm-thick ITO seed layer is sufficient to achieve a charge mobility comparable to that of pure ITO films. The photoluminescence spectra have shown a decrease in the concentration of the oxygen vacancies with the introduction of both the cover and seed layers of ITO. The figure of merits (FOM) of the triple-layer coatings and the optical constants of the AZO and ITO films were calculated. The results of this paper indicate that the ITO20/AZO48/ITO12 triple-layer coating possesses optimal characteristics for use in high-efficiency silicon solar cells. [Display omitted] • ITO seed layer with a thickness >8 nm improves AZO layer crystallinity. • 20 nm ITO seed layer enough to increase mobility from 9.56 to 41.34 cm2V−1s−1. • Introduction of ITO layers decreases concentration of oxygen vacancies in AZO layer. • ITO12/AZO48/ITO20 layer has the best FOM equal to 9.13 10−4 □ Ω−1. • 60–76 % replacement of ITO by AZO improves transparency in the region of 350–1100 nm. [ABSTRACT FROM AUTHOR]