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Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150-180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystallites (NCs) of iron and chromium disilicides, polycrystalline nanocomposites with buried Mg2Si NCs and epitaxial MnSi1.74 nanoislands on Si(111) substrate. Grown quasi-zero dimensional heterostructures with multilayers of β-FeSi2 NCs atop silicon p-n junction have demonstrated the range expansion of photoelectrical sensitivity up to 1.8 µm and strong room temperature electroluminescence at 1.2 - 1.6 µm. A new approach to the selective doping of embeddded nanocrystallites inside silicon matrix has been developed on the base of the successive formation of ordered superstructures of metals (Ag, Sb) together with silicide island formation. Nanocomposite layers with n- and p-type conductivity and huge Seebeck coefficient (550-750 µV/K) in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si-p and Si/Mg2Si NCs/Si-n nanocomposites have been created and tested. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]