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Guided growth of silicon nanowires (SiNWs) into precise locations, via an in-plane solid–liquid–solid (IPSLS) mechanism, is a key basis for scalable integration of SiNW-based electronics, but an effective n-type doping has not yet been accomplished. In this work, we report a bismuth (Bi) catalyzed and doped growth of IPSLS SiNWs, where the incorporation of Bi atoms gives rise to efficient n-type doping, as confirmed by electron dispersion analysis and transfer properties of SiNW transistors. Interestingly, a rich geometry evolution is observed during the Bi-catalyzed planar growth, which evolves from discrete islands to continuous island chains and to uniform segments, prior to a final droplet collapsing/flattening at the end. A growth model has been established to address this peculiar phenomenon, emphasizing the impact of surface/interface tensions on the stability of the leading catalyst droplet. These results provide a solid basis for the construction of more advanced complementary SiNW logics and electronics. [ABSTRACT FROM AUTHOR]

Despite the fundamental difference in material systems and temporal evolution, self-oscillating growth of silicon nanowires (SiNWs), led by metal droplets, resembles very much natural river meanders in terms of their sinuosity, fractal dimensions, and scaling law. Both of them are driven by the release of higher potential energy stored in the disorder hydrogenated amorphous Si (a-Si:H) matrix or at highlands, tailored by a streamwise flow mechanism and subject to an erodible boundary constraint imposed by the a-Si:H thin film or the soil banks, respectively. Under specific conditions, the cross-droplet/stream velocity difference can be magnified, during the in-plane growth of SiNWs, to stimulate regular swaggering dynamics that produce continuous and smooth SiNW meanders. This interesting phenomenon indicates a rather simple and highly efficient strategy to shape complex elastic channels with only a few control parameters. A kinetic model has been established to explain the underlying mechanism of the self-oscillating meandering growth, which has unique potential to transform rigid SiNW channels into elastic forms for flexible or stretchable electronic applications. [ABSTRACT FROM AUTHOR]