1. Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires.
- Author
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Dong, Taige, Sun, Ying, Wang, Junzhuan, Xu, Jun, Chen, Kunji, and Yu, Linwei
- Subjects
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SILICON nanowires , *PARTICLE size determination , *INTERFACE stability , *ARCHIPELAGOES , *CATALYSTS - Abstract
Guided growth of silicon nanowires (SiNWs) into precise locations, via an in-plane solid–liquid–solid (IPSLS) mechanism, is a key basis for scalable integration of SiNW-based electronics, but an effective n-type doping has not yet been accomplished. In this work, we report a bismuth (Bi) catalyzed and doped growth of IPSLS SiNWs, where the incorporation of Bi atoms gives rise to efficient n-type doping, as confirmed by electron dispersion analysis and transfer properties of SiNW transistors. Interestingly, a rich geometry evolution is observed during the Bi-catalyzed planar growth, which evolves from discrete islands to continuous island chains and to uniform segments, prior to a final droplet collapsing/flattening at the end. A growth model has been established to address this peculiar phenomenon, emphasizing the impact of surface/interface tensions on the stability of the leading catalyst droplet. These results provide a solid basis for the construction of more advanced complementary SiNW logics and electronics. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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