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Poales [represented by rice (Oryza sativa L.)] in angiosperms and Equisetum (horsetails) in Pteridophytes are two major groups of heavy silicon (Si) accumulators. In rice, Si is polymerized preferentially in the epidermal cell wall, forming Si-cuticle double layers and Si-cellulose double layers beneath the cuticle. This Si layer is thought to exert various beneficial effects on the growth and development of land plants. Although the recent discovery of the influx and efflux transporters of silicic acid has shed some light on the molecular mechanisms of Si uptake and transport in rice, the mechanism underlying the final incorporation of polymerized Si into the cell wall remains elusive. Despite their phylogenetic distance, the cell walls of the two Si accumulators, Poales and Equisetum, share another common component, i.e. (1;3,1;4)-β-D-glucan, also known as mixed-linkage glucan (MLG), a matrix polysaccharide not found in other plants. Based on this coincidence, a possible correlation between the functions of Si and MLG in the cell wall has been suggested, but no experimental evidence has been obtained in support of this functional correlation. Here, we present an analysis of the correlative action of Si and MLG on the mechanical properties of leaf blades using a transgenic rice line in which the MLG level was reduced by overexpressing EGL1, which encodes (1;3,1;4)-β-D-glucanase. The reduction in MLG did not affect total Si accumulation, but it significantly altered the Si distribution profile and reduced the Si-dependent mechanical properties of the leaf blades, strongly suggesting a functional correlation between Si and MLG., (© The Author 2014. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.)

We describe an immersion grating (IG) with both low polarization-dependent loss (PDL) and high diffraction efficiency. Our immersion grating consists of a silicon (Si) prism and a Si grating coated with dielectric film. We analyze the effect of the refractive index of dielectric film and clarify the refractive index ratio between a Si grating and dielectric film. Selecting an adequate material for the dielectric film, we design the diffraction efficiency of TM polarization without changing that of TE polarization. The simulation results for the optimized IG show a PDL of 0.2 dB and diffraction efficiency of -0.4 dB. A prototype with high dispersion power provides a low PDL of 0.6 dB, while maintaining a high diffraction efficiency of -0.4 dB.

Rice (Oryza sativa L.) is a typical Si-accumulating plant and is able to accumulate Si up to >10 % of shoot dry weight. The cell wall has been reported to become thicker under Si-deficient condition. To clarify the relationship between Si accumulation and cell wall components, the physical properties of, and macromolecular components and Si content in, the pectic, hemicellulosic, and cellulosic fractions prepared from rice seedlings grown in hydroponics with or without 1.5 mM silicic acid were analyzed. In the absence of Si (the -Si condition), leaf blades drooped, but physical properties were enhanced. Sugar content in the cellulosic fraction and lignin content in the total cell wall increased under -Si condition. After histochemical staining, there was an increase in cellulose deposition in short cells and the cell layer just beneath the epidermis in the -Si condition, but no significant change in the pattern of lignin deposition. Expression of the genes involved in secondary cell wall synthesis, OsCesA4, OsCesA7, OsPAL, OsCCR1 and OsCAD6 was up-regulated under -Si condition, but expression of OsCesA1, involved in primary cell wall synthesis, did not increase. These results suggest that an increase in secondary cell wall components occurs in rice leaves to compensate for Si deficiency.

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. [ABSTRACT FROM AUTHOR]

This paper reports a hybrid integrated light source fabricated on a Si platform using a spot-size converter (SSC) with a trident Si waveguide. Low-loss coupling for 1.55 μm and 1.3 μm wavelengths was achieved with merely the simple planar form of a Si waveguide with no use of complicated structures such as vertical tapers or an extra dielectric core overlaid on the waveguide. The coupling loss tolerance up to a 1 dB loss increase was larger than the accuracy of our passive alignment technology. The coupling efficiency was quite robust against manufacturing variations in the waveguide width compared with that of a conventional SSC with an inverse taper waveguide. A multi-channel light source with highly uniform output power and a high-temperature light source were fabricated with a 1.55 μm quantum well laser and a 1.3 μm quantum dot laser, respectively. The integration scheme we report can be used to fabricate light sources for high-density, multi-channel Si optical interposers. [ABSTRACT FROM PUBLISHER]