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We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.

In this work, we present a novel wavelength multiplexing concept for an integrated label-free biosensor array employing silicon photonic Mach-Zehnder interferometers as sensors. Microring resonators act as wavelength selective elements in order to address the individual interferometers. Wire Bragg gratings terminate the interferometer arms and reflect the light back, which eliminates the risk of a wavelength mismatch between drop and add port. The characteristics of the device are discussed and the design based on FEM and 3D-FDTD simulations as well as measurements of the nanophotonic key components-micro ring resonators, Mach-Zehnder interferometers and photonic wire Bragg gratings-are presented. Measurements of combinations of the wire Bragg gratings with ring resonators and Mach-Zehnder interferometer sensors demonstrate the applicability of the reflectors in photonic circuits. [ABSTRACT FROM AUTHOR]

Abstract: Reactive ion etch (RIE) processes with HBr/O2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12nm gate length and optimized photonic devices with ultrahigh Q-factors. [Copyright &y& Elsevier]

We report on an innovative fabrication method for high-quality resonant photonic devices on silicon-on-insulator substrates with quality (Q)-factor of 47 700 and propagation losses of 3.5 dB/cm. The definition of a resonator device using soft ultraviolet-nanoimprint lithography is detailed followed by description of an adapted structure transfer process. Spectral response measurements and propagation loss analysis were carried out evidencing the functionality of the fabricated resonator. [ABSTRACT FROM PUBLISHER]

Abstract: Silicon is an essential material in the fabrication of a continually expanding range of micro- and nano-scale opto-and microelectronic devices. The fabrication of many such devices requires patterning of the silicon but until recently exploitation of the technology has been restricted by the difficulty of forming the ever-smaller features and higher aspect ratios demanded. Plasma etching through a mask layer is a very useful means for fine-dimension patterning of silicon. In this work, several solutions are presented for the micro- and nano-scale etching of silicon using inductively coupled plasmas ICP. [Copyright &y& Elsevier]

Abstract: In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top–down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra-thin body silicon-on-insulator MOSFETs cannot compete with graphene FET values. [Copyright &y& Elsevier]