Search

A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppress light-induced degradation of a-Si:H solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen dilution ratios the growth of films becomes strongly inhomogeneous and the transition from amorphous to microcrystalline phase occurs at a smaller thickness. A detailed X-ray diffraction (XRD) analysis of the amorphous films reveals that the strongest peak in the XRD patterns is located around 27.5° and corresponds to the signal from the ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum of this peak narrows from 5.1° to 4.8° as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The presence of silicon hydride ordered domains in amorphous films is confirmed by the lattice imaging method applied to the high resolution TEM recordings. The amorphous silicon films fabricated at different hydrogen dilution were applied as absorber layers in single-junction solar cells. The degradation experiment confirms that the cells with absorber layers deposited using hydrogen dilution are more stable to light exposure. A clear reduction of the degradation is observed when the dilution ratio is increased from R = 0 to R = 20. The degradation of solar cells with absorber layers prepared at R > 20 is not reduced by further increasing R. [ABSTRACT FROM AUTHOR]

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800 °C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. [ABSTRACT FROM AUTHOR]

We present two-dimensional arrays of silver nanoparticles embedded in amorphous silicon, fabricated by a sequential Si/Ag/Si electron-beam evaporation process. The particle arrays exhibit surface plasmon resonance spectra in the near-infrared (0.9 eV), with tails extending below 0.5 eV. The data are compared with calculations that take into account measured particle size, shape anisotropy, and separation. It is concluded that the large redshift is mainly due to the high refractive index of the matrix, with shape anisotropy and interparticle coupling contributing several tenths of an electron volt. This work enables plasmon-related applications at the telecommunication wavelength of 1.5 μm (0.8 eV). [ABSTRACT FROM AUTHOR]

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (∼1.5 μm) polycrystalline silicon was obtained after SPC of high growth rate (∼25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. [ABSTRACT FROM AUTHOR]