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Abstract: This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride properties on device performance are given. It is important to investigate that the advantage of the high film integrity of nitride layers used in the past is not lost due to the strong demand for developing new process schemes with low thermal budget layers. We show that PECVD films are a valid alternative for LPCVD and that the majority of the film properties satisfy the criteria to use PECVD films as contact-etch-stop layers, silicidation blocking films and spacer materials. [Copyright &y& Elsevier]

Abstract: In this paper we will highlight key integration issues that were encountered during the development of the 3D-stacked IC Through Silicon Via (TSV) module and present solutions to achieve a robust copper TSV. Electrical performance of the obtained TSV module is discussed based on a lumped RC model for 3D ring oscillators containing TSVs between bottom and top tiers. [Copyright &y& Elsevier]