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We present a novel concept for an integrated silicon photonic coherent transceiver using vertical-emitting laser sources at 1550 nm. In a state of the art external modulation configuration, we deploy a VCSEL on the transmit and a HCSEL on the receive side. We demonstrate the feasibility of this approach by externally modulating the VCSEL with QPSK at up to 28 Gbaud. We also perform experiments with the VCSEL-HCSEL configuration in a slave-master optical injection locking setup for future data center interconnects. The results show stable locking conditions and the VCSEL is detuned to perform predominant phase modulation. To the best of our knowledge, this is the first time direct phase modulation of a VCSEL under optical injection locking was demonstrated using two vertically emitting laser sources as master - and slave laser. [ABSTRACT FROM AUTHOR]

In this paper a silicon-on-insulator nanorib waveguide with reverse-biased p-i-n-junction is used to experimentally demonstrate phase-sensitive amplification based on four-wave mixing for the realization of an in-line four-level phase-regenerator. Phase regeneration of a 14-GBd quadrature phase-shift keying signal is demonstrated for the first time employing a silicon waveguide as phase sensitive amplifier. The regenerator is placed in a 1040-km dispersion-managed link and it is shown that phase noise accumulation in the transmission link can be reduced by the use of the in-line silicon-based phase-regeneration. [ABSTRACT FROM PUBLISHER]

In this letter, a dual-drive Si depletion-type Mach–Zehnder modulator (MZM) monolithically integrated with a segmented driver using 0.25- \mu \textm SiGe:C photonic bipolar complementary metal–oxide–semiconductor technology is demonstrated. The phase shifter on each MZM arm has a total length of 6.048 mm and is divided into 16 sections, driven by the driver segments. Extinction ratio (ER) higher than 11 dB is shown at 28 and 32 Gb/s at ON–OFF keying with a differential input voltage swing of 800 mVpp (3.5 Vpp on the phase shifters). The power consumption equals to 64 pJ/b at 28 Gb/s. This is one of the highest ER values shown by a monolithically integrated Si MZM at this data rate. [ABSTRACT FROM PUBLISHER]