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This letter demonstrates that ion channeling patterns, produced by the passage of 3 MeV protons through a 0.5 μm thick [001] silicon crystal, can be transported and manipulated to produce enlarged or reduced area patterns using magnetic quadrupole lenses. The different effects on the ion channeling patterns obtained by using single quadrupole lenses and quadrupole multiplets are shown. The maximum attainable magnification under present conditions is investigated and a fundamental limitation to this process is identified as being the energy spread gained by the proton beam as it passes through the crystal.

The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 μm thick epitaxial layer of Si 0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 μm under present conditions. The factors which presently limit this value, and methods for improving it are discussed.

This paper shows ion channeling images of the strain field produced by precipitate particles in a crystal matrix. Images have been produced by mapping the energy of 3 MeV protons transmitted through a thinned silicon crystal containing colonies of copper silicide particles, with the incident beam at or close to planar channeling directions of the lattice. Features of the precipitate contrast observed as a function of beam tilt angle away from channeling alignment are qualitatively explained using a model based on symmetrical plane rotation of the crystal lattice around the colonies. © 1996 American Institute of Physics.