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We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz. [ABSTRACT FROM AUTHOR]

Starting from the data of deep-level transient spectroscopy, the charge fluctuations at the interface between the top Si layer and buried insulator in Si-on-insulator structures are evaluated. The interface was prepared by bonding Si with the thermally oxidized substrate. The magnitude of fluctuations at the interface is found to be equal or exceed (1.5–2.0) ×10[sup 11]cm[sup –2] against the charge background of ∼5×10[sup 11]cm[sup –2] at this interface. It is shown that the fluctuations are most likely associated with the negative charge at the surface states rather than with the fluctuations of the fixed positive charge within oxide. © 2003 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

Deep-level centers in a split-off silicon layer and trap levels were studied by deep-level transient spectroscopy both at the Si/SiO[sub 2] interface obtained by direct bonding and also at the Si(substrate)/〈thermal SiO[sub 2]〉 interface in the silicon-on-insulator structures formed by bonding the silicon wafers and delaminating one of the wafers using hydrogen implantation. It is shown that the Si/〈thermal SiO[sub 2]〉 interface in a silicon-on-insulator structure has a continuous spectrum of trap states, which is close to that for classical metal-insulator-semiconductor structures. The distribution of states in the upper half of the band gap for the bonded Si/SiO[sub 2] interface is characterized by a relatively narrow band of states within the range from E[sub c] - 0.17 eV to E[sub c] - 0.36 eV. Furthermore, two centers with levels at E[sub c] - 0.39 eV and E[sub c] - 0.58 eV are observed in the split-off silicon layer; these centers are concentrated in a surface layer with the thickness of up to 0.21 µm and are supposedly related to residual postimplantation defects. [ABSTRACT FROM AUTHOR]

We have designed a silicon detector based on an avalanche photodiode for detecting vacuum ultraviolet radiation. It was demonstrated that the detector has a photon detection efficiency superior to 0.65 electrons / photon, in the wavelength range from 114 to 170 nm, with an external quantum yield from 49 to 7000 electrons / photon at a reverse-bias voltage from 190 to 315 V, respectively. The detector's active area diameter is 1.5 mm. [ABSTRACT FROM AUTHOR]

In this study, we compared the trap density distributions, D[sub it], in the band gap of silicon at the Si/thermal SiO[sub 2] interface and at the bonded interface of the silicon–on–insulator structure, deduced from deep level transient spectroscopy measurements. The trap energies for the bonded Si/SiO[sub 2] interface are localized in the range from E[sub c]–0.17 to E[sub c]–0.37 eV. The lack of the transient SiO[sub x] layer at the bonded interface is suggested to lead to a relatively narrow interval of trap energies. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]