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The dark current degradation and dark current random telegraph signal (DC-RTS) after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS image sensor. Results show that previously reported empirical models describing the displacement damage-induced degradations are still valid despite the 10–100 times smaller depletion volume used. In addition, no evidence of significant total ionizing dose effects is observed. Finally, the reduction of the fraction of RTS pixels detected and the fraction of multilevel RTS pixels is directly linked to the reduction in pixel volume. [ABSTRACT FROM AUTHOR]

A better understanding of the linear energy transfer (LET) and the range of proton recoil ions in gallium nitride (GaN) is necessary to properly evaluate GaN device radiation tolerance. By analyzing the LET and range of recoil heavy ions in GaN, we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth, we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know toward the effort of ensuring radiation tolerance. [ABSTRACT FROM AUTHOR]

Silicon (Si) single-photon avalanche diode (SPAD) arrays sensitive to the 400- to 900-nm wavelength range have been studied for a number of uses due to their high detection efficiency; zero readout noise; low timing jitter; mechanical robustness; low-voltage (< 50 V) operation; mass producibility; and low size, weight, power, and cost. As with all solid-state detectors, however, they are susceptible to damage by radiation, with displacement damage by energetic particles being the primary concern for many applications. This article reports the results of low-dose-rate neutron irradiation from an americium–beryllium (AmBe) source on a 256×256 array of 10-μm active diameter SPADs, each with live recording of their dark count rate (DCR), up to a cumulative displacement damage dose equivalent to that delivered by a 1-MeV neutron fluence of 5.69 ⋅ 109 cm−2 in Si (11.59 TeV/g). A small fraction (~2.57%) of the SPADs in the array experienced a significant step increase in their DCR, which we ascribe to displacement damage. The remainder experienced a far more gradual and subdued increase. For this reason, an operational concept for SPAD arrays, whereby SPADs that begin to exhibit a step increase in DCR are disabled, should significantly extend the useful performance of such arrays in radiation environments. We report the surviving proportion of an array implementing such an operational concept per unit dose and its DCR. [ABSTRACT FROM AUTHOR]

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm2/mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. [ABSTRACT FROM AUTHOR]

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy ion-irradiated Schottky diodes. After failures have been identified, the parts were cross sectioned to describe the structure of the failures and energy dispersive X-ray spectroscopy was used to characterize the materials in the failure structures. [ABSTRACT FROM PUBLISHER]

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures. [ABSTRACT FROM PUBLISHER]