1. Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.
- Author
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Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, and Paruchuri, Vamsi
- Abstract
Formation of heavy C and/or P doping Si alloy with a strain and/or low resistivity in FinFET S/D having only {110} plane on fin sidewall poses a challenge because, if the CVD selective epitaxy typically used in recent S/D process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {110} crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed. [ABSTRACT FROM PUBLISHER]
- Published
- 2012
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