1. In situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz.
- Author
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Hasnaoui, I., Pottrain, A., Lacave, T., Chevalier, P., Gloria, D., and Gaquiere, C.
- Abstract
Load impedance variations were obtained using an innovative integrated tuner at G‐band. The 200 GHz load‐pull measurements on a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load‐pull characteristics are extracted from a 0.13 × 3 µm2 emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non‐50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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