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Abstract: We present the electronic structure calculation of two closely p-type -doped quantum wells within the lines of the Thomas–Fermi–Dirac (TFD) theory. The distance between the impurity planes as well as the impurity density of the -doped wells is varied. The exchange effects are also considered in the present study. We have paid special attention to the split-off band and its influence on the subband hole levels. We also calculate the mobility ratio of double -doped (DDD) quantum wells in Si with respect to a single -doped (SDD) one, finding the optimum distance between the wells for maximum mobility. Our results are in a good agreement with respect to the experimental data available. [Copyright &y& Elsevier]

Describes the electronic structure of a delta-doped quantum well of boron in silicon as a temperature function. Use of Hartree approximation in the calculation; Energy levels and occupation number of the discrete states; Changes in carrier concentration at temperature greater than 80 degrees Kelvin.