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Your search keyword '"Cunge, Gilles"' showing total 4 results
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4 results on '"Cunge, Gilles"'

1. Top-coats for scalable nano-manufacturing with high-χ block copolymers in lithographic applications

Author

Chevalier, Xavier, Gomes correia, Cindy, POUND-LANA, Gwenaelle, Bézard, Philippe, SÉRÉGÉ, Matthieu, PETIT-ETIENNE, Camille, Gay, Guillaume, Cunge, Gilles, CABANNES-BOUÉ, Benjamin, Nicolet, Célia, Navarro, Christophe, Cayrefourcq, Ian, Müller, Marcus, Hadziioannou, Georges, Iliopoulos, Ilias, Fleury, Guillaume, Gomez Correia, Cindy, Zelsmann, M., Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie des Polymères Organiques (LCPO), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC), and Université de Bordeaux (UB)-Ecole Nationale Supérieure de Chimie, de Biologie et de Physique (ENSCBP)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Planarity testing, chemistry, Stack (abstract data type), 0103 physical sciences, Scalability, Copolymer, Lamellar structure, 0210 nano-technology, Lithography, ComputingMilieux_MISCELLANEOUS, Nano manufacturing
Abstract

Results for the self-assembly of lamellar silicon-containing high-χ block copolymers (BCP) with innovative neutral top-coat design are presented. We demonstrate that these materials and associated processes are compatible with a standard lithographic process, and oriented toward a potential high volume manufacturing. We show that this dedicated technology is able to guarantee the stability and planarity of the stack even at elevated self-assembly bake temperatures, and opens new opportunity in the fields of 3D BCPs stacks. Finally, we show interesting results for the etch-transfer of a lamellar BCP in silicon.

Published
2021
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2. Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Author

Oehrlein, Gottlieb, Lin, Qinghuang, Zhang, Ying, Archambault, Sophie, Girardot, Cécile, Salaün, Mathieu, Delalande, Michael, Böhme, Sophie, Cunge, Gilles, Pargon, Erwine, Joubert, Olivier, Zelsmann, Marc, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources [Beijing] (NCEPU), North China Electric Power University, Optique et Matériaux (OPTIMA), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Optique et Matériaux (NEEL - OPTIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Plasma etching, Silicon, business.industry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Photoresist, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry, Resist, law, 0103 physical sciences, Optoelectronics, Wafer, Photolithography, 0210 nano-technology, business, Lithography, ComputingMilieux_MISCELLANEOUS, Wetting layer
Abstract

Block CoPolymer (BCP) self-assembly creates periodical patterns with feature sizes eventually below 10 nm. On plain substrates, ordering is only obtained in grains not larger than a few micrometers but self-assembly in trenches of a pattern (using so-called graphoepitaxy technique) can create long-range order between the polymer micro-domains. As a result, such directed self-assembly (DSA) approaches may be used as ultra-high resolution patterning schemes in the microelectronics industry. Due to its ease of processing, a large majority of the lithographic BCP work reported so far concerned polystyreneblock- polymethylmethacrylate (PS-b-PMMA). Researchers show now an increased interest to polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) block copolymers due to its improved resolution. In the present study, typical industry-like photolithography stacks are patterned by combining graphoepitaxy with cylindrical PS-b-PDMS BCP and state of the art plasma etching technologies. The industry like photolithography stack is fabricated on 300 mm diameter silicon wafers, and composed of three layers: Spin-On-Carbon (SOC), Siliconcontaining Anti-Reflective Coating (SiARC) and 193 nm photolithography resist. About 60 nm deep trenches are first patterned by plasma etching in the SiARC/SOC stack using the 193 nm photolithography resist mask. These trenches are then used to confine the BCP and guide the self-assembly of horizontal PDMS cylinders. Wetting conditions allows avoiding the interfacial PDMS wetting layer at the bottom and lateral interfaces after the solvent annealing step. Finally, dedicated pulsed plasma etching conditions were developed in order to reveal the BCP patterns, transfer them into the remaining SOC layer under the trenches and finally into the underlying silicon substrate. 15 nm half-pitch dense line/space features are formed with a height up to 105 nm. In conclusion, long-range order line/space features could be produced by using horizontal cylindrical high Flory- Huggins parameter (χ) BCPs combined with industry-type photolithography stacks.

Published
2014
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3. Roughness generation during Si etching in Cl2 pulsed plasma.

Author

Mourey, Odile, Petit-Etienne, Camille, Cunge, Gilles, Darnon, Maxime, Despiau-Pujo, Emilie, Brichon, Paulin, Lattu-Romain, Eddy, Pons, Michel, and Joubert, Olivier

Subjects
SURFACE roughness, SILICON, ETCHING, ION channels, CHLORINATION, PULSED plasma thrusters
Abstract

Pulsed plasmas are promising candidates to go beyond limitations of continuous waves' plasma. However, their interaction with surfaces remains poorly understood. The authors investigated the silicon etching mechanism in inductively coupled plasma (ICP) Cl2 operated either in an ICP-pulsed mode or in a bias-pulsed mode (in which only the bias power is pulsed). The authors observed systematically the development of an important surface roughness at a low duty cycle. By using plasma diagnostics, they show that the roughness is correlated to an anomalously large (Cl atoms flux)/(energetic ion flux) ratio in the pulsed mode. The rational is that the Cl atom flux is not modulated on the timescale of the plasma pulses although the ion fluxes and energy are modulated. As a result, a very strong surface chlorination occurs during the OFF period when the surface is not exposed to energetic ions. Therefore, each energetic ion in the ON period will bombard a heavily chlorinated silicon surface, leading to anomalously high etching yield. In the ICP pulsed mode (in which the ion energy is high), the authors report yields as high as 40, which mean that each individual ion impacts will generate a "crater" of about 2 nm depth at the surface. Since the ion flux is very small in the pulsed ICP mode, this process is stochastic and is responsible for the roughness initiation. The roughness expansion can then be attributed partly to the ion channeling effect and is probably enhanced by the formation of a SiClx reactive layer with nonhomogeneous thickness over the topography of the surface. This phenomenon could be a serious limitation of pulsed plasma processes. [ABSTRACT FROM AUTHOR]

Published
2016
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4. Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing.

Author

Petit-Etienne, Camille, Darnon, Maxime, Vallier, Laurent, Pargon, Erwine, Cunge, Gilles, Boulard, François, Joubert, Olivier, Banna, Samer, and Lill, Thorsten

Subjects
SILICON, SUBSTRATES (Materials science), GATE array circuits, OXIDES, TRANSISTORS, ELLIPSOMETRY, X-ray photoelectron spectroscopy, OXIDATION
Abstract

Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon generates the so-called silicon recess in the channel and source/drain regions of the transistors. In this work, the authors compare the silicon recess generated by continuous wave HBr/O2/Ar plasmas and synchronous pulsed HBr/O2/Ar plasmas. Thin SiO2 layers are exposed to continuous and pulsed HBr/O2/Ar plasmas, reproducing the overetch process conditions of a typical gate etch process. Using in situ ellipsometry and angle resolved X-ray photoelectron spectroscopy, the authors demonstrate that the oxidized layer which leads to silicon recess can be reduced from 4 to 0.8 nm by pulsing the plasma in synchronous mode. [ABSTRACT FROM AUTHOR]

Published
2010
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