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High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm³, which was the 88% theoretical value of YIG single crystal. The effects of annealing condition were also discussed. When annealed at 750°C for 1 h, YIG films showed a very small coercive field of 12 Oe and the peak-to-peak ferromagnetic resonance linewidth can be as low as 95 Oe at 9.10 GHz. The results demonstrated that YIG films prepared on Pt-buffered Si substrates can be beneficial to the application of YIG films to integrated devices. [ABSTRACT FROM AUTHOR]

PbxSr1-xTiO3 ( PST) thin films with the ratio Pb/Sr = 40/60 were deposited on silicon substrate with Pt or LaNiO3 ( LNO) bottom electrodes by radio frequency magnetron sputtering followed by a postannealing treatment. The structural and microstructural analyses were performed and a perovskite phase was obtained whatever the nature of the bottom electrodes and even at a low temperature (450°C). The optimal annealing temperature is 650°C at which the films have a dense and fine microstructure. For electrical characterization the different top electrodes ( Pt and LNO) were used. In both cases, we demonstrate that PST films present excellent performances in terms of dielectric properties and in particular, the tunability and Figure of Merit. A large tunability (57% at 400 kV/cm) and low dielectric losses (1.4%) were measured at 10 kHz for Pt/PST/Pt structures postannealed at 500°C. For LNO/PST/LNO structures, postannealed at 650°C, the improved tunability (≈80%) and low loss factor (≈2%) were obtained. Prospects of PST as an alternative to BST for tunable applications with a real potentiality of monolithic integration with silicon, in terms of thermal budget, are considered. [ABSTRACT FROM AUTHOR]

Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 (PST/LSMO) thin film has been deposited on Si substrate by chemical solution deposition. Obvious changes in dielectric constant and loss as functions of frequency and magnetic field were observed in PST/LSMO thin film. By applying both dc bias electric and magnetic fields, apparent dielectric anomalies were observed in the 'butterfly-hysteresis' curves. These effects may be useful for practical application. The mechanism for the magnetocapacitance effects in PST/LSMO is rationalized by combining the Maxwell-Wagner capacitor model and the magnetoresistivity and magnetostriction of the LSMO. [ABSTRACT FROM AUTHOR]