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This manuscript is about the electric output of the silicon (Si) photovoltaic (PV) cell versus the electromagnetic field of a radio wave and a monochromatic illumination in three-dimensional (3D) assumptions. The polarisation direction of the electromagnetic wave and power density are fixed. The electromagnetic wave is provided by electromagnetic emission sources such as the telecommunication, radio, or TV antennas. A PV system is installed in the vicinity of an electromagnetic emission source. The current produced by the PV cell is sensitive to electromagnetic field increase more than the electric voltage. The electromagnetic field causes the decomposition of the current into two components which are a transferred current and a leakage current. The transferred component provides the transmitted current to the external load while the leakage component gives the loss of the carrier charge into the junction. Consequently, this decomposition of the current shares the electric power in transferred electric power and leakage electric power. The transferred electric power is obtained only in the intermediate circuit, and the maximum power point (MPP) shifts to the short circuit situation as the junction dynamic velocity becomes the greatest. However, the leakage electric power corresponds to a loss of the minority carrier’s charge in the junction during the crossing of the junction. This loss causes a Joule heating effect of the junction. The heating of the junction causes the quality degradation of the PV cell mainly due to the electric component. The solar illumination wavelength is presenting the inversion phenomenon with the maximum of the electrical outputs of the silicon PV cell of around 0.70 μm which provides the greatest conversion efficiency. This value has been chosen for the modelling of the radio wave influence. Hence, the conversion efficiency increases when the PV system is far away from the electromagnetic emission source. PV system installation in the vicinity of an electromagnetic emission source is not advised.

The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are: the mobility of solar cell carriers (electrons and holes), their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T) μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility, leads to the expressions of the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperature. We observe also that with the increase of the temperature, the density of carriers in the base of the solar cell in short circuit and open voltage operating modes increases. In intermediate operating mode, the density of carriers increases also with the temperature but it is function of the base depth.

This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases. MARTIAL ZOUNGRANA, ISSA ZERBO, MAHAMADI SAVADOGO, SANNA TIEDREBEOGO, BOUBACAR SORO AND DIEUDONNE JOSEPH BATHIEBO