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Nitrogen-doped graphitic nanoribbons (N x-GNRs), synthesized by chemical vapor deposition (CVD) using pyrazine as a nitrogen precursor, are reported for the first time. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) reveal that the synthesized materials are formed by multilayered corrugated GNRs, which in most cases exhibit the formation of curved graphene edges (loops). This suggests that during growth, nitrogen atoms promote loop formation; undoped GNRs do not form loops at their edges. Transport measurements on individual pure GNRs exhibit a linear I- V (current-voltage) behavior, whereas N x-GNRs show reduced current responses following a semiconducting-like behavior, which becomes more prominent for high nitrogen concentrations. To better understand the experimental findings, electron density of states (DOS), quantum conductance for nitrogen-doped zigzag and armchair single-layer GNRs are calculated for different N doping concentrations using density functional theory (DFT) and non-equilibrium Green functions. These calculations confirm the crucial role of nitrogen atoms in the transport properties, confirming that the nonlinear I- V curves are due to the presence of nitrogen atoms within the N x-GNRs lattice that act as scattering sites. These characteristic N x-GNRs transport properties could be advantageous in the fabrication of electronic devices including sensors in which metal-like undoped GNRs are unsuitable. [ABSTRACT FROM AUTHOR]

Nitrogen‐doped graphitic nanoribbons are synthesized by a single‐step chemical vapor deposition method using pyrazine as the nitrogen source. As M. Terrones and co‐workers report on page 3755, the morphology of the nanoribbons is correlated to the presence of N atoms within the graphitic structure. Spectroscopy results, in conjunction with transport measurements on individual nanoribbons and DFT theoretical simulations, indicate that nitrogendoped graphitic nanoribbons possess features that are potentially useful for the development of sensors and other electronic components. [ABSTRACT FROM AUTHOR]