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There is discernable and significant band dispersion along both high symmetry directions for cleaved ordered surfaces of the layered In4Se3(001). The extent of dispersion of approximately 1 eV is observed along the surface chain rows, and about 0.5 eV perpendicular to the surface “furrows,” consistent with theoretical expectations. A possible surface state exists at the surface Brillouin zone edge, in the direction perpendicular to the chains, in a gap of the projected bulk band structure. Excluding the possible surface state, the experimental hole mass is 5.5 times greater along the chains than perpendicular to the chains, but the dispersion is easier to discern. [ABSTRACT FROM AUTHOR]

The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1 eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap. [ABSTRACT FROM AUTHOR]