Search

The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor deposition growth is very well suited for selective in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFETs). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon metal oxide semiconductor field effect transistors and discuss integration issues. [ABSTRACT FROM AUTHOR]

The article focuses on the carbon naotubes. It states that carbon nanotubes offer more energy-efficient replacement for conventional silicon transistors. It mentions about the advancement in carbon-nanotube computer. It reports about the use of n-type metal-oxide-semiconductor (NMOS) logic in forming arbitrary logic elements and circuits. It highlights the execution of the SUBNEG (subtract and branch if negative) command by carbon-nanotube computer.

The article focuses on the single-walled carbon nanotube (SWCNT) transistors that was developed and found to perform better than the best conventional silicon analogues. It states the experiment that demonstrated the ideality of replacing silicon with carbon material in the future semiconductor technology. It mentions the benefit that the ability of certain devices to operate at small voltage supply can provide in the mitigation energy consumption in future microchips.