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Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of >600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication. [ABSTRACT FROM AUTHOR]

• Wide-band-gap amorphous (LuGa) 2 O 3 film has been successfully prepared. • A photovoltaic type DUV photodetector based on (LuGa) 2 O 3 film is fabricated. • The (LuGa) 2 O 3 -film DUV photodetector exhibits good characteristics. Wide-band-gap semiconductor photosensitive material has a significant impact on the performance of deep-ultraviolet photodetector, which makes exploring novel high-quality wide-band-gap semiconductor a hot topic in the field of deep-ultraviolet detection. In this paper, we propose an efficient method to grow wide-band-gap semiconductor, according to which a wide-band-gap amorphous (LuGa) 2 O 3 film is successfully prepared by magnetron sputtering Lu 2 O 3 and Ga 2 O 3 targets simultaneously, and a photovoltaic type deep-ultraviolet detector based on that amorphous (LuGa) 2 O 3 film is fabricated. The detector exhibits an extremely low dark current of 25 pA, a high photo-to-dark current ratio of 103, a high responsivity of 8.0 mA/W and good stability. All the results achieved in this study demonstrate that magnetron sputtering is an efficient method to grow wide-band-gap alloyed semiconductor and also get the possibility of (LuGa) 2 O 3 film as a promising material for deep-ultraviolet detection. [ABSTRACT FROM AUTHOR]