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Nonlinear transport is intensively explained through Poole-Frenkel (PF) transport mechanism in organic thin film transistors with solution-processed small molecules, which is, 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene. We outline a detailed electrical study that identifies the source to drain field dependent mobility. Devices with diverse channel lengths enable the extensive exhibition of field dependent mobility due to thermal activation of carriers among traps.

Internal reorganization energies and interchain transfer integrals are two key parameters governing the charge-transport properties of organic semiconducting materials. Here, in order to model some aspects of device operation in field-effect transistors based on conjugated oligomers, we investigate via semiempirical quantum-chemical calculations the way these two parameters are modified when a static electric field in the range 10[sup 6]–10[sup 8] V/cm is applied along the long axis of pentacene and sexithienyl molecules. For the highest fields, a pronounced redistribution of the charges along the oligomer chains occurs, which is accompanied by significant geometric distortions. However, these charge redistribution effects are found not to impact significantly the transport parameters. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract: In this study, we report on the influence of the semi-conductor thickness on organic thin-film transistors (OTFTs). Devices are fabricated with a top gate/bottom contact geometry on plastic substrates. Both n-channel and p-channel OTFTs made, respectively, from a N,N-dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative (Polyera ActivInk™ N1400) and from 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) are studied and compared. Impact of the active semiconducting layer thickness on both contact resistance and mobility are uncorrelated by the use of the transfer line method (TLM). When increasing the thickness of the semi-conductor, we find an increasing contact resistance and a decreasing channel mobility for both n- and p-channel OTFTs. The loss of mobility with increased thickness is attributed to a degradation of the interface between the semi-conductors and the dielectric, and is studied by atomic force microscope (AFM). [Copyright &y& Elsevier]