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Abstract: The electron spectrum of δ-doped quantum wells in n-GaAs is investigated by means of the Thomas–Fermi (TF) method at finite temperatures. This method shows rapid convergence and good accuracy. Under two-dimensional (2D) doping concentrations 1013…2×1013 cm−2, the simplest TF method (T=0K) can be used to calculate the profiles of the potential well up to T≈200K. The simplest TF method yields correct results for the electron concentrations and the differences of the electron energy sublevels in the quantum well up to room temperature (T∼300K). [Copyright &y& Elsevier]

Abstract: The electronic structure of a delta-doped quantum well of Si in GaAs is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. As a consequence, the temperature dependence of the mobility can be explained by means of the temperature variation of the electronic structure. The calculated ratios between mobilities at 300 and 77K, at different impurity densities, are in excellent agreement with the experimental data. These results can also be extrapolated to other similar systems like B, GaN, InSb, InAs and GaAs. [Copyright &y& Elsevier]

We present an alternative and efficient way for calculating the superlattice Green function for discrete systems. The idea is to consider the superlattices as a crystal with the unit cell having the size of the superlattice period in the growth direction. The calculation method takes into account the matrix structure of the system Hamiltonian and a block tridiagonal matrix inversion algorithm. To illustrate the method we study the electronic band structure of a semiconductor superlattice described by means of an empirical sp3s* tight-binding Hamiltonian, including nearest-neighbor interactions and spin–orbit coupling. [Copyright &y& Elsevier]