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The effect of elastic stresses on the Ga(As, P) crystalline phase of nanowires is studied. It is shown that the elastic stresses can lead to the stable growth of whisker nanocrystals in the metastable phase. The possibility of crystal-phase switching inside a GaP nanowire after the appearance of a Ga(As, P) insert is described. [ABSTRACT FROM AUTHOR]

In this work, we account the local variations of nanowire number density to extend the previous approaches to modeling of III–V nanowire length distributions in lithography-free self-catalyzed growth processes. We calculate the growth rate controlled by the re-evaporation of group V atoms from the substrate and derive the analytical expressions for length distributions in irregular arrays of nanowires. The obtained theoretical results fit well the experimentally observed statistics of self-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si/SiOx substrates. [ABSTRACT FROM AUTHOR]

We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 –xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state. [ABSTRACT FROM AUTHOR]

Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au–Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor–liquid–solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques. [ABSTRACT FROM AUTHOR]

Abstract: The growth of ternary nanowires via the vapor-liquid-solid mechanism is one of the possible ways of band gap engineering. However, the dependence of ternary nanowire composition on growth parameters is still unclear. We compare two theoretical approaches to ternary nanowire composition determined either by the formation of the critical island or by the step-flow growth of the monolayer. For typical parameters of gold-catalyzed growth, these two models give similar results. In the case of self-catalyzed growth, the step-determined model predicts higher In content in the NW than the island-determined. [ABSTRACT FROM AUTHOR]

Abstract—: Nanowires are one of the most promising building blocks for various nanoelectronic devices. Nanowires are usually grown via the so-called vapor-liquid-solid mechanism on the surfaces activated by the droplets of a catalyst (e.g., Au). Here we theoretically studied the impact of the evaporation from the droplet on the nucleation statistics. Within the semi-analyticalapproach, we obtain the relation between the nucleation time distributions and the evaporation rate of atoms from the droplet. We analyze the Si NW length-time dependences to estimate theeffective lifetime of a silicon atom in a gold-silicon alloy at 550°C is about 5 s. [ABSTRACT FROM AUTHOR]