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We investigated the dielectric, ferroelectric, and pyroelectric properties of Mn-doped 0.74Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 crystals. Compared with pure PMN-0.26PT, Mn substitutions resulted in reduced dielectric loss and enhanced coercive field. Furthermore, the pyroelectric coefficient and detectivity figures of merits were enhanced to 17.2×10-4 C/m2 K and 40.2×10-5 Pa-1/2, respectively, which were the highest values so far reported among intrinsic pyroelectric materials with rhombohedral-tetragonal phase transition temperature greater than 90 °C. The specific detectivity of infrared detector based on Mn-doped crystals was 1.07×109 cm Hz1/2 W-1, and approximately doubles that of commercial LiTaO3 crystals-based, which makes them promising candidates for infrared detectors applications. [ABSTRACT FROM AUTHOR]

The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon. [ABSTRACT FROM AUTHOR]

By using first-principles calculations and nonequilibrium Green's function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance (NDR) behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested. [ABSTRACT FROM AUTHOR]