1,070 results on '"ARSENIC compounds"'
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2. Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
3. Bulk and interfacial properties of the compositionally graded In sub x Al sub 1-x As (x le 0. 52) quasi-insulator and its applications
4. Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistors
5. Influence of silicon nitride cap on the thermal stability of strained Al[sub 0. 32]Ga[sub 0. 68]As/In[sub 0. 1]Ga[sub 0. 9]As high mobility structures grown by metalorganic chemical vapor deposition
6. Trilayer lift-off metallization process using low temperature deposited SiN[sub x]
7. Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown n-GaAs
8. Substrate-epitaxial layer interface effects on AlGaAs/GaAs heterostructure device properties
9. CH sub 4 /H sub 2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors
10. Characteristics of current filamentation in high gain photoconductive semiconductor switching
11. Photoconductive switching for high power microwave generation
12. Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE (low pressure Metalorganic Vapor Phase Epitaxy)
13. Hydrogen in semiconductors
14. Electronic and photonic power applications
15. Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices
16. Triggering GaAs lock-on switches with laser diode arrays
17. Subnanosecond, high voltage photoconductive switching in GaAs
18. Rise time and recovery of GaAs photoconductive semiconductor switches
19. Optically-triggered GaAs thyristor switches: Integrated structures for environmental hardening
20. Band-gap narrowing and III-V heterostructure FETs (Field-Effect Transistors)
21. Photoconductive switching for HPM (high power microwave) generation
22. Monolithically integrated GaAs thyristor-transistor as a hardened optically-triggered switch
23. Development of infrared detectors based on Type II, InAsSb strained-layer superlattices
24. Triggering GaAs lock-on switches with laser diode arrays
25. Study and development of tunable, single mode AlGaAs/GaAs lasers
26. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors
27. Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The-Art Auger Nanoprobes
28. Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics
29. Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application
30. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
31. Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
32. Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes
33. Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications
34. Direct acoustic phonon excitation by intense and ultrashort terahertz pulses
35. Radiation effects in nanoelectronic elements
36. Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
37. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors
38. In situ optical diagnostics of growing surfaces in the process of nanoheterostructure fabrication
39. Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 {mu}m and 1.22 {mu}m
40. A terahertz plasmon cavity detector
41. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
42. 808-nm laser diode bars based on epitaxially stacked double heterostructures
43. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode
44. Reduction of native oxides on InAs by atomic layer deposited Al{sub 2}O{sub 3} and HfO{sub 2}
45. Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode
46. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
47. Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors
48. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
49. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
50. Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs
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