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The performance of five hole‐transporting layers (HTLs) is investigated in both single‐junction perovskite and Cu(In, Ga)Se2 (CIGSe)‐perovskite tandem solar cells: nickel oxide (NiOx,), copper‐doped nickel oxide (NiOx:Cu), NiOx+SAM, NiOx:Cu+SAM, and SAM, where SAM is the [2‐(3,‐6Dimethoxy‐9H‐carbazol‐9yl)ethyl]phosphonic acid (MeO‐2PACz) self‐assembled monolayer. The performance of the devices is correlated to the charge‐carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time‐resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr‐SPV), and X‐ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi‐Fermi level splitting to open‐circuit (QFLS‐Voc) deficit is detected for the NiOx‐based devices, attributed to electron trapping and poor hole extraction at the NiOx‐perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiOx with 2% Cu and passivating its surface with MeO‐2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non‐radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge‐carrier dynamics, NiOx:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe‐perovskite tandem devices, enabling a power‐conversion efficiency (PCE) of 23.4%, Voc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent Voc and FF losses. [ABSTRACT FROM AUTHOR]

In article number 1801892, Steve Albrecht, Vytautas Getautis and co‐workers demonstrate a novel promising concept for the formation of a hole selective monolayer in perovskite solar cells. A low temperature dopant‐free technique makes it suitable for different substrates. [ABSTRACT FROM AUTHOR]

The unprecedented emergence of perovskite‐based solar cells (PSCs) has been accompanied by an intensive search of suitable materials for charge‐selective contacts. For the first time a hole‐transporting self‐assembled monolayer (SAM) as the dopant‐free hole‐selective contact in p–i–n PSCs is used and a power conversion efficiency of up to 17.8% with average fill factor close to 80% and undetectable parasitic absorption is demonstrated. SAM formation is achieved by simply immersing the substrate into a solution of a novel molecule V1036 that binds to the indium tin oxide surface due to its phosphonic anchoring group. The SAM and its modifications are further characterized by Fourier‐transform infrared and vibrational sum‐frequency generation spectroscopy. In addition, photoelectron spectroscopy in air is used for measuring the ionization potential of the studied SAMs. This novel approach is also suitable for achieving a conformal coverage of large‐area and/or textured substrates with minimal material consumption and can potentially be extended to serve as a model system for substrate‐based perovskite nucleation and passivation control. Further gains in efficiency can be expected upon SAM optimization by means of molecular and compositional engineering. A novel concept for the formation of the hole selective layer in efficient perovskite solar cells is presented. Carbazole‐based material is synthesized and used for the formation of a self‐assembled monolayer on top of the indium tin oxide transparent conductive substrate. Power conversion efficiency as high as 17.8% is achieved. [ABSTRACT FROM AUTHOR]