1. Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs
- Author
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Xia Liu, Berke Erbas, Ana Conde-Rubio, Norma Rivano, Zhenyu Wang, Jin Jiang, Siiri Bienz, Naresh Kumar, Thibault Sohier, Marcos Penedo, Mitali Banerjee, Georg Fantner, Renato Zenobi, Nicola Marzari, Andras Kis, Giovanni Boero, and Juergen Brugger
- Subjects
Science - Abstract
Abstract Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS2 FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.
- Published
- 2024
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