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High-performance InAlZnO (IAZO) Schottky barrier diodes (SBDs) with top Pd/IAZO Schottky contact were fabricated, and the influence of sputtering power used to prepare IAZO films on the device performance was investigated. The 50 W-fabricated IAZO SBD exhibited the relatively best electrical properties, including a close-to-unity ideality factor (1.03), a high rectification ratio (1.83 × 107), a low series resistance (237.5 mΩ cm2), large barrier heights (0.87 and 0.82 eV), and a small barrier inhomogeneity (0.05 eV), which was mainly due to the least background doping density (8.43 × 1015/cm3) and interface state density (4.30 × 1010/eV cm2) at 50 W. Meanwhile, the IAZO SBDs prepared at 50 W also displayed the best device uniformity and highest reverse breakdown voltage (−15.23 ± 0.405 V). A 50 W-fabricated IAZO SBD with a horizontal structure was then applied to the ultraviolet photodetector, and it showed good detection effect, especially the fast response with an average rise time of 0.208 s and an average decay time of 0.094 s. Our study indicates the great research value and development potential of IAZO SBDs in future integrated circuits and other fields. [ABSTRACT FROM AUTHOR]

Thin-film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin-film SBDs based on indium–gallium–zinc oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low-temperature (100 °C) annealing in air atmosphere. PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high-quality contact with rather low interface trap state density of $2.6\times 10^{17}$ cm−3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high-performance IGZO SBDs were achieved with high ON/ OFF ratio of $3\times 10^{7}$ , near–unity ideality factor of 1.04, barrier height of 0.85 eV, high ON-current density of 2.5 $\text{A}\cdot $ cm−2 at 1 V, and high reverse breakdown voltage of ~12 V. [ABSTRACT FROM AUTHOR]

A high-performance Schottky diode based on a 600- ${\mu }\text{m}$ -thick Cr-doped ${\beta }$ -Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency-related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high-quality Ga2O3 single crystal grown by an edge-defined film-fed method has a carrier concentration of $1.0 \times 10^{18}$ cm $^{-3}$ and an electron mobility of ~90 cm2/Vs. The current density–voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.19 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond $10^{10}$. The frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is $2.46 \times 10^{12}$ eV $^{-1}$ cm $^{-2}$ at a frequency of 500 kHz. [ABSTRACT FROM AUTHOR]