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High resolution low-energy electron diffraction, scanning tunneling microscopy (STM), and transmission electron microscopy (TEM) have been used to study the temperature dependence of a vicinal (stepped) Si(111) surface with a polar angle of 6° from (111) along an azimuth rotated about 10° away from the high symmetry [112] direction. At the (1×1) to (7×7) reconstructive transition, the kinks at the step edges precipitate into a phase with high step density and increased rotation from the [112] direction, leaving behind a [112] oriented phase with triple-layer height steps and (7×7) reconstruction. The inclination and azimuth of the orientation of the kinked phase change continuously with temperature. When the surface is cooled to room temperature, STM images confirm a coexistence between the [112] oriented step-tripling phase and the kinked phase. In the step-tripling phase, the steps are very straight (kinks are rare) and oriented in the [112] direction. There is a small fraction of single-layer height steps between the predominant triple-layer height steps. All the terraces in this phase are (7×7) reconstructed. In the kinked phase, steps with a high density of kinks are bunched together and rotated to a direction about 45° away from [112]. TEM images of the surface topography also confirm the phase coexistence on a macroscopic scale. This phase separation (azimuthal faceting) is reversible, and can be understood thermodynamically by analogy with phase separation in a two-component fluid. [ABSTRACT FROM AUTHOR]

The growth of Si and Ge on silicon nitride surfaces has been investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectrometer (AES). In the early stages, Si or Ge nanoclusters appeared irrespective of the different substrates. When annealed, the Si clusters were more stable against coalescence than those of Ge. As these clusters continued to grow, crystalline facets started to form. Both Si and Ge islands grew predominantly with (111)-oriented top facets on the crystalline Si3N4(0001)/Si(111). By contrast, they both grew in random orientation on the amorphous Si3N4 surface. Low-index facets such as (111) and (001) coexisted with high-index facets such as (113). [ABSTRACT FROM AUTHOR]

Abstract: We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(111) with average lateral width from 9 to 20nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(110) plane. The Bi nanowires grow along direction and align with the directions on Ag(111). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(110) which saturates the dangling bonds and lowers the total energy. [Copyright &y& Elsevier]

Abstract: The adsorption of S2 on the Si(111)-(7×7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(111) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(111)-(7×7) surface. Excessive sulfur forms S n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu–S bonds. Upon annealing the sample at 300°C, CuS x nanocrystals were produced on the sulfur-terminated Si(111) surface. [Copyright &y& Elsevier]

Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed using in situ scanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types of Ge nanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. Compact Ge islands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-deposited Sb on graphite enhances the sticking probability and suppresses the surface diffusion of Ge atoms, resulting in a significant increase in Ge cluster island density on HOPG terraces. [ABSTRACT FROM AUTHOR]

We present a low-temperature scanning tunneling microscopy investigation revealing the formation of a long range ordered α-sexithiophene (6T) monolayer nanostripe array on highly ordered pyrolytic graphite, with thiophene ring units oriented parallel to the surface. The 6T monolayer nanostripe is an effective molecular nanotemplate for the assembly of an ordered “zigzag” C60 chain array, accompanied by a slight structural modification of the underlying 6T nanostripes due to donor-acceptor intermolecular interactions between 6T and C60 molecules. [ABSTRACT FROM AUTHOR]