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In this paper, it is shown how to obtain a low-cost, high-resolution, and fault-robust position sensing system for permanent-magnet synchronous motor drives operating in safety-critical systems, by combining binary Hall-effect sensors with high-frequency signal injection. It is shown that the position error signal obtained via signal injection can be merged easily into the quantization-harmonic-decoupling vector-tracking observer that is used to process the Hall-effect sensor signals. The resulting algorithm provides accurate, high-resolution estimates of speed and position throughout the entire speed range; compared to the state-of-the-art drives using Hall-effect sensors alone, the low-speed performance is greatly improved in healthy conditions and also following position sensor faults. It is envisaged that such a sensing system can be successfully used in applications requiring IEC 61508 SIL 3 or ISO 26262 ASIL D compliance, due to its extremely high mean time to failure and to the very fast recovery of the drive following Hall-effect sensor faults at low speeds. Extensive simulation and experimental results are provided on a 3.7-kW interior permanent-magnet drive. [ABSTRACT FROM AUTHOR]

This paper investigates the performance of a three-phase permanent magnet synchronous motor (PMSM) drive operating under a single fault, adopting a low cost and fault-tolerant control based on deadbeat-direct torque and flux control (DB-DTFC). Under faulty operation, this fault-tolerant DB-DTFC offers an independent regulation of the electromagnetic torque and the stator flux linkage by using the same torque line equation, stator flux linkage, and current observers adopted during healthy conditions, requiring very limited hardware reconfigurations. In particular, it has been demonstrated that in a fault situation, the same drive model equations adopted for the healthy electric drive can be exploited with very limited detrimental effects on the drive performance simply by applying a suitable reference frame transformation set in the torque and flux control structure. The proposed fault-tolerant DB-DTFC has been validated by experimental tests, confirming that the proposed fault-tolerant DB-DTFC ensures satisfactory faulty operations and drive stability, without significant degradation of parameter sensitivity, keeping limited the increment of computational efforts. [ABSTRACT FROM PUBLISHER]

In this paper, binary Hall-effect sensor faults are investigated in rectangular-current-fed brushless dc (BLDC) drives and a very effective methodology for their detection, identification, and compensation is explored. It is shown that these faults cause erroneous commutation, generally leading to unstable operation. Using a fault detection and identification technique proposed by the authors in a recent paper on low-cost field-oriented drives, it is possible to pinpoint the faulty sensors. In this paper, it is demonstrated that the destabilizing effect of these faults on motion-state estimation can be compensated for in any position and speed estimation algorithm, as long as it is properly readapted. To this end, it is shown how to incorporate such fault-compensation in three state-of-the-art estimation algorithms: 1) the zeroth-order algorithm (ZOA); 2) the hybrid observer (HO); and 3) the vector-tracking observer (VTO). Comparative experimental tests are performed and it is verified that stable operation is achieved with three, two, or only a single Hall-effect sensor functioning correctly. These results show that the classical BLDC drive with three Hall-effect sensors has an inherent double redundancy to position-sensor faults. With the proposed method, this property can be exploited in systems that require very high reliability, such as in aerospace and automotive applications. Redundancy can be increased, using more than three Hall-effect sensors; reduced using two sensors; or eliminated using a single sensor, in ultra low-cost applications where redundancy is not a requirement. [ABSTRACT FROM AUTHOR]

A strong demand for even more compact and reliable power electronic devices has powered the development of advanced design techniques. A key role is played in these techniques by the reliability assessment, a procedure that estimates the expected lifetime according to given mission profiles. The reliability assessment of a low voltage MOSFET working in avalanche mode is considered in this paper through an experimental approach based on the Coffin–Manson law. Differently from previously proposed techniques, based on a thermodynamic analysis, a direct measurement of the thermal strain over the source aluminum layer is instead exploited. The consistence of the proposed technique is evaluated by comparing estimation of the progressive increment of the on-state resistance with results of endurance tests and estimation obtained from previously presented reliability models. The described technique can be applied to assess the reliability of MOSFETs in applications typical of the automotive field, where they are tasked to power inductive loads in unclamped mode. More in general, the method can be exploited to characterize the front metal of MOSFET devices subjected to power cycling, or short-circuit stress tests. [ABSTRACT FROM AUTHOR]

This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner's rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology. [ABSTRACT FROM AUTHOR]