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In this study, novel Li2ZnSnS4 (LZSS4) thin films have been manufactured using the inexpensive spray pyrolysis system. The study of the X-ray diffraction (XRD) of the LZSS4 films demonstrated that these LZSS4 samples have crystalline structures with monoclinic phases. The elemental analysis of the LZSS4 samples refers to the presence of Li, Zn, Sn, and S in the LZSS4 samples. Their ratio is near 2:1:1:4. Meanwhile, the linear optical study of the LZSS4 samples indicates that the LZSS4 samples have a direct energy gap (Eg), and the growth of thickness led to a decrease in the Eg values from 1.73 eV to 1.48 eV. Conversely, the refractive index of the LZSS4 samples increases from 2.56 to 4.18 by raising the thickness of the investigated samples. Moreover, the Wemple-Didomenico single oscillator model was applied to compute the dispersion parameters of the LZSS4 samples. It was found that the dispersion energy, Ed, improved from 15.87 to 17.26 eV, and the oscillator energy, Eo, dropped from 6.44 to 4.91 eV by raising the thickness from 261 to 486 nm. Also, the study of the optoelectrical and nonlinear optical parameters refers to enhancing the non-linear refractive index (n2), optical resistivity (), optical carrier concentration (), relaxation time (τ), and optical mobility (). [ABSTRACT FROM AUTHOR]

This research seeks to fabricate neoteric VSbO4 sheets at various thicknesses (138, 217, 291, and 374 nm) utilizing spray pyrolysis. Scanning electron microscopy was used to analyze the VSbO4 sheets' surface properties. Aside from that, X-ray diffraction demonstrated that all neoteric VSbO4 films revealed a polycrystalline nature with a tetragonal structure. The optical characteristics of the neoteric VSbO4 sheets were investigated using transmission and reflection spectrophotometric readings. The refractive index of the neoteric VSbO4 sheets increased by enlarging the sample thickness. The VSbO4 sheets' Urbach energy magnitudes have increased from 0.113 to 0.146 eV by increasing layer thickness from 138 to −374 nm. Also decreasing from 3.81 to 3.37 eV is the optical band-gap energy. Further, the impacts of layer thickness on the linear optical parameters increase the refractive index, electrical conductivity, real and imaginary sections of the dielectric indices, and optical conductivity. The nonlinear optical indices of the neoteric VSbO4 films grew as the sheet thickness increased from 138 to 374 nm. Further, the activation energy of the explored VSbO4 sheets decreased by increasing the sheet thickness. [ABSTRACT FROM AUTHOR]

In this research, we report the manufacture of neoteric AgGaGeS4 layers by the thermal evaporation method. The AgGaGeS4 layers exhibited orthorhombic structure, and the structural indices were evaluated using the Scherer formulas from the XRD data. Further, the surface study indicated that the AgGaGeS4 films have homogenous and uniform surfaces, while energy-dispersive X-ray spectroscopy (EDX) confirmed the compositional constituent percentages of the AgGaGeS4 layers. The optical properties of the AgGaGeS4 layers refer to improving the extinction coefficient, absorption coefficient, and refractive index by enlarging the layer thickness. In addition, the optical bandgap of the AgGaGeS4 layers was lowered from 1.67 to 1.46 eV by boosting the layer thickness. Furthermore, the skin depth of these layers diminished, whereas the absorption coefficient values revealed the opposite trend. On the other side, Miller's equations have been applied to assess nonlinear optical properties of the AgGaGeS4 layers, such as nonlinear refractive index and first and third-order nonlinear optical susceptibility. Moreover, the hot-probe method proved the p-type semiconducting characteristics of the AgGaGeS4 layers. [ABSTRACT FROM AUTHOR]

The fabrication of new kesterite absorber layers has drawn tremendous attention among a number of researchers. This article reports the preparation of good-quality copper zinc germanium sulfide Cu2ZnGeS4 (CZGS4) thin films via a convenient spray pyrolysis method. The fabrication of an Al/n-Si/Cu2ZnGeS4/Au heterojunction is also presented. X-ray diffraction results confirmed the tetragonal structure in the CZGS4 samples. Additionally, energy-dispersive x-ray examination illustrated that the Cu2ZnGeS4 samples possess a nearly stoichiometric composition. From the transmittance and reflectance data, the energy gap (Eg), refractive index (n) and absorption coefficient (α ) were assessed. According to the Tauc relation, the Cu2ZnGeS4 thin samples exhibit a direct optical transition. The energy gap values were found to be in the range of 1.52–1.27 eV. The dispersion and nonlinear optical parameters of the Cu2ZnGeS4 samples were also investigated. Electrical studies showed that the Al/n-Si/Cu2ZnGeS4/Au heterojunction has good rectifying properties, with efficiency of 3.3%. [ABSTRACT FROM AUTHOR]