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Abstract: We present a new method of determining the depth profile of the doping concentration in Si δ-doped GaAs layers and GaAs-based heterostructures by micro-Raman spectroscopy. In-depth resolution is obtained by scanning the laser spot along a shallow bevel synthesized in the structure of interest. The doping level is determined by assessing changes in the ratio of the transversal to the longitudinal optical phonon lines intensities. The determined doping concentration values are in good agreement with those determined by secondary ion mass spectroscopy and capacitance–voltage methods. [Copyright &y& Elsevier]

Abstract: A new method for determining the doping concentrations in very thin GaAs layers is presented. The method is based on the evaluation and calibration of the changes in ratio of transversal to longitudinal optical phonon intensities measured by micro-Raman spectroscopy at different positions along the bevel prepared through the examined structure. The doping concentrations measurements by micro-Raman spectroscopy on bevelled structures are in good agreement with SIMS depth profiling analysis. [Copyright &y& Elsevier]