Search

An artificial neural network (ANN) based tunable automated standalone RF sensor system is proposed to realize an improved sensing module involving a quite accurate solution of the non-linear inverse characterization problem. The presented tunable sensor system is quite novel as it alleviates the need for any active tuning circuitry. Moreover, the proposed unified design topology facilitates a relatively higher tuning range (1900 MHz) than that of the earlier reported (580 MHz) capacitor-based tunable complementary split-ring resonator (CSRR). The higher tuning range of structures resulted from the improved design configuration comprising a modified CSRR design coupled with a modified microstrip line. The obtained dielectric sensitivity is ∼8.8%. The numerically generated S-parameters of various dielectric samples are used here as a training dataset for the ANN, which is trained using the Levenberg–Marquardt backpropagation algorithm in combination with the Bayesian regularization. Finally, several standard test samples at different unloaded tuned frequencies are measured to record the corresponding resonant frequency and magnitude of the S-parameter in order to process them using the proposed ANN-based sensor system. It is found that the developed ANN-based sensor system provides a reasonably accurate value of the extracted complex permittivity over the frequency range under consideration, which basically removes the need for designing multiple resonant structures unlikely to the conventional resonant sensors. [ABSTRACT FROM AUTHOR]

The hot carrier and ionizing radiation responses of 45-nm SOI RF nMOSFETs are investigated. Devices with “tight” source/drain (S/D) contact spacing have improved RF performance but degraded hot carrier reliability and radiation tolerance. Devices with “loose” gate finger-to-gate finger spacing have improved RF performance and also improved hot carrier and radiation tolerance. The effects of finger width on the hot carrier stress and ionizing radiation degradation of strained silicon-on-insulator RF MOSFETs are also investigated. Enhanced degradation is observed for devices with wide finger widths and is attributed to the greater channel-region mechanical stress induced impact ionization. This result is contrary to the previous studies which showed that narrow channel width devices should exhibit greater damage. Taken together, these results have serious consequences for RF circuits that require large widths for sufficient RF gain. Finally, devices with symmetric halo doping are observed to exhibit greater total-dose degradation than devices with asymmetric halo doping. [ABSTRACT FROM PUBLISHER]

We have examined the reliability risks of complementary SiGe HBTs on thick-film silicon on insulator (SOI). DC stress techniques, such as reverse emitter–base (EB) stress, mixed-mode stress, and flyback measurements, were used to characterize the safe operating area of n-p-n and p-n-p SiGe HBTs fabricated on SOI substrates. The measurements were analyzed based on fundamental damage mechanisms, such as hot carriers generated at the EB and collector–base junctions during large reverse voltage, and thermal runaway as a result of high current phenomena. RF stress (using a large amplitude continuous-wave signal) was also performed to examine the reliability of complementary bipolar complementary metal–oxide–semiconductor devices and circuits in an RF context. In both cases, p-n-p SiGe HBTs were found to be more reliable than n-p-n SiGe HBTs, a fact that may offer opportunities for circuit design optimization. [ABSTRACT FROM PUBLISHER]

We investigate, for the first time, the feasibility of operating silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) in a weakly saturated bias regime to enable ultralow-voltage RF front-end design. Measured dc, ac, and RF characteristics of third-generation high-performance SiGe HBTs operating in weak saturation are presented. Robust RF operation of \0.12 \times \6.0\ \mu\m^2 SiGe HBTs are demonstrated in a common–emitter configuration at collector-to-emitter voltages above 0.15 V. A noise figure of 1.33 dB and an input third-order intercept point above -8 dBm for a 3-GHz input tone are achieved at 0.30 V. These results have potential implications for RF circuits used in severely power-constrained systems. [ABSTRACT FROM AUTHOR]