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A radio-frequency photoreflectance technique, which senses changes in sample conductivity as carriers recombine following excitation by a laser pulse, has been used to measure the recombination parameters in 0.55-eV InGaAsSb lattice matched to GaSb. Doubly capped lifetime structures with variable active layer thicknesses are used to extract the surface recombination velocity, while an analysis of the samples with different doping concentrations is used to obtain Auger (C) and radiative (B) recombination parameters. Parameter extraction for the samples evaluated gives C=(1±0.4)×10-28 cm6/s and B=(3±1.5)×10-11 cm3/s for 0.55-eV InGaAsSb lattice matched to GaSb. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples show very good agreement with the values obtained from low-level injection conditions. [ABSTRACT FROM AUTHOR]

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk and surface recombination parameters in doubly capped, 0.50-0.59-eV, p-type InGaAsSb epitaxial materials. The InGaAsSb lifetime structures with variable active-layer thicknesses are used to extract the surface recombination velocity (SRV), while samples with different active-layer doping concentrations have been used to determine the Auger and radiative recombination coefficients. The RF photorefiectance measurements and analysis are compatible with a radiative recombination coefficient (B) of approximately 3 x 10[sup-11] cm⊃3/s, Auger coefficient (C) of 1 x 10[sup-28] cm[sup6]/s, and SRV of ∼10⊃3 cm/s or lower for 0.50-0.59 eV, doubly capped, p-type InGaAsSb epitaxial layers. [ABSTRACT FROM AUTHOR]