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This work investigates the radiation resistance of high‐performance multi‐component perovskite solar cells (PSCs) for the first time under extreme short‐pulse proton irradiation conditions. The devices are subjected to high‐intensity 170 keV pulsed (150 ns) proton irradiation, with a fluence of up to 1013 p cm−2, corresponding to ≈30 years of operation at low Earth orbit. A complex material characterization of the perovskite active layer and device physics analysis of the PSCs before and after short‐pulse proton irradiation is conducted. The obtained results indicate that the photovoltaic performance of the solar cells experiences a slight deterioration up to 20 % and 50 % following the low 2 × 1012 p cm−2 and high 1 × 1013 p cm−2 proton fluences, respectively, due to increased non‐radiative recombination losses. The findings reveal that multi‐component PSCs are immune even to extreme high‐intense short‐pulse proton irradiation, which exceeds harsh space conditions, including intense coronal ejection events usually associated with solar flares. [ABSTRACT FROM AUTHOR]

In this study, a comprehensive quantitative analysis of the photodiode (PD) is conducted and photovoltaic (PV) characteristics of organic non‐fullerene PCE10:ITIC‐4F devices before and after exposure to a 150 ns pulse of 170 keV proton irradiation with the fluence of 2·1012 p cm−2 that is equivalent to ≈6 years of operation at a low Earth orbit. While an expected initial performance reduction happened in the photodiode and photovoltaic operation modes, a hitherto unknown self‐healing effect in the organic devices is observed several days after the proton irradiation. The organic bulk‐heterojunction (BHJ) material properties and the multi‐mechanisms recombination processes before and after irradiation and during self‐healing are investigated. This analysis provides a quantitative understanding of the changes occurring in the device physics and points toward the relevant aspects of the self‐healing mechanism related to the dynamics of proton‐induced traps in the bulk of the organic active layer. Ultimately, the synergy of record lightweight features and newly discovered self‐healing of proton‐induced damage in organic PDs and solar cells highlights their great potential for applications in rapidly emerging space technology. [ABSTRACT FROM AUTHOR]

This work reports, for the first time, on radiation resistance of state‐of‐the‐art multicomponent Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 perovskite photodiodes, tested under high‐intensity pulsed 170 keV proton irradiation with fluence up to 1013 protons cm−2. The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 1012 protons cm−2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 1013 protons cm−2 deteriorates photodiode parameters on average by only 25% with respect to that of the as‐prepared devices. The revealed high‐performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low‐cost solution‐processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions. [ABSTRACT FROM AUTHOR]

A novel high‐performance ultraviolet–visible–near‐infrared (300–820 nm) heterojunction photodiode based on radiation‐resistant semiconductor materials is proposed. A titanium nitride (TiN) "window" layer is deposited via magnetron sputtering onto a cadmium zinc telluride (CdZnTe) solid solution single crystal. The TiN/CdZnTe heterojunction photodiodes concurrently reveal an outstanding detectivity, response time, and linear dynamic range outperforming similar heterojunction photodiodes and photodetectors, based on photoactive inorganic compound semiconductor materials. Moreover, the added feature of the proposed heterojunction photodiodes is their excellent radiation resistance, experimentally demonstrated under short impulse proton irradiation (170 keV) with an accumulated fluence of 2 × 1012 proton cm−2. This unusual synergy of high performance and advanced radiation resistance of the TiN/CdZnTe photodiodes provides a unique platform for operation in space or radioactively contaminated environments. [ABSTRACT FROM AUTHOR]

A new type of sub‐micron metal‐intrinsic semiconductor‐metal visible to near‐infrared (400–1600 nm) photodiodes based on a unique combination of radiation‐resistant functional materials: sapphire, TiN, MoOx, CdTe, Hg3In2Te6, and graphite is proposed. The promising optoelectronic characteristics are calculated in the scope of a comprehensive semi‐analytical model, based on the complementary fusion of numerical Transfer Matrix optical simulation with analytical Hecht and dark generation current equations. The findings demonstrate proof‐of‐concept next‐generation high‐performance optoelectronic devices with advanced radiation resistance. Moreover, a simple device engineering modification has revealed a significant optimization potential for considered photodiodes. [ABSTRACT FROM AUTHOR]

Even heavily proton-irradiated perovskite photodiodes retain 75% of their initial photoelectric characteristics: external quantum efficiency of >=80%, spectral responsivity of 0.46 A/W, and maximum detectivity of 2 × 10 SP 12 sp Jones. Detectivity, hybrid perovskites, photodiodes, radiation resistance Keywords: detectivity; hybrid perovskites; photodiodes; radiation resistance EN detectivity hybrid perovskites photodiodes radiation resistance 1 1 1 05/24/23 20230519 NES 230519 In article number 2203001, Viktor V. Brus and co-workers report on the advanced radiation resistance of high-performance self-powered UV-Vis-NIR (300-800 nm) multi-component hybrid perovskite photodiodes. [Extracted from the article]

This study proposed self-adaptive nanostructured heterojunction UV-VIS-NIR photodiodes carbon nanowalls (CNWs)/cadmium zinc telluride (CdZnTe) exhibiting stable photoelectric characteristics under ionizing radiation conditions. We carried out a comprehensive analysis of the impact of proton radiation with an energy of 1.5 MeV and a total fluence of 1012 protons/cm2 on the properties of CNWs and CdZnTe functional layers, as well as on the main photodiode characteristics of the CNWs/CdZnTe heterojunctions, employing a set of state-of-the-art materials and device characterization techniques. Responsivity and detectivity of the prepared heterojunctions even slightly improve after exposure to harsh ionizing radiation conditions due to the unique radiation-induced self-adaptive features of the CNWs/CdZnTe heterojunction interface. The characteristics of the CNWs/CdZnTe photodiodes before and after high-energy proton bombardment demonstrate excellent stability, which is the key requirement for long-term and reliable operation of optoelectronic devices in space or radioactively contaminated environments. [Display omitted] •Nanostructured heterojunction photodiodes carbon nanowalls/cadmium zinc telluride. •Proton radiation with an energy of 1.5 MeV and a total fluence of 1012 protons/cm2. • Radiation-tolerant photodiode characteristics of CNWs/CdZnTe heterojunctions. [ABSTRACT FROM AUTHOR]