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Your search keyword '"Ottogalli, Federica"' showing total 3 results
Start Over Author "Ottogalli, Federica" Topic radiation effects
3 results on '"Ottogalli, Federica"'

1. Total ionizing dose effects on 4Mbit phase change memory arrays

Author

Gasperin, Alberto, Wrachien, Nicola, Cester, Andrea, Paccagnella, Alessandro, Ottogalli, Federica, Corda, Ugo, Fuochi, Piergiorgio, and Lavalle, Marco

Subjects
Materials science, animal structures, business.industry, urogenital system, Chalcogenide, Phase change memory, Radiation effects, Phase Change memory, Non volatile memory, Radiation, Ionizing radiation, Phase-change memory, Non-volatile memory, Phase change, Absorbed dose, NonVolatile memories, MOSFET, embryonic structures, Optoelectronics, Irradiation, GST, Total ionizing dose, business, skin and connective tissue diseases
Abstract

We investigate Total Ionizing Dose effects on 4Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the WordLine selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. © 2007 IEEE.

Published
2007

2. Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors.

Author

Gasperin, Alberto, Paccagnella, Alessandro, Schwank, James R., Vizkelethy, Gyorgy, Ottogalli, Federica, and Pellizzer, Fabio

Subjects
PROTONS, HEAVY ions, METAL oxide semiconductor field-effect transistors, CHALCOGENIDES, PHASE transitions, RADIATION
Abstract

We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation. [ABSTRACT FROM PUBLISHER]

Published
2008
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3. Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays.

Author

Gasperin, Alberto, Wrachien, Nicola, Paccagnella, Alessandro, Ottogalli, Federica, Corda, Ugo, Fuochi, Piergiorgio, and Lavalle, Marco

Subjects
IONIZING radiation, ELECTRONS, IRRADIATION, METAL oxide semiconductor field-effect transistors, PHASE transitions, ENERGY dissipation
Abstract

We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line Selector MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations. [ABSTRACT FROM AUTHOR]

Published
2008
Full Text
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