1. Near Surface Changes Due to 700 keV Si+ Irradiation of Titanium Silicon Carbide.
- Author
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Qi, Qiang, Liu, Chaozhuo Z., King, Bruce V., O'Connor, Daryl J., Kisi, Erich H., Wang, Kung, Shi, Liqun Q., and Vance, E.
- Subjects
TITANIUM compounds ,RADIATION damage ,SILICON carbide ,SCANNING electron microscopy ,RUTHERFORD backscattering spectrometry - Abstract
The radiation damage response of Ti
3 SiC2 heated from 120°C to 850°C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence Xray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiCx . Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a β phase in addition to the normal a phase of Ti3 SiC2 . A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures. [ABSTRACT FROM AUTHOR]- Published
- 2015
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