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Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, T=50 K. It is likely that the ferromagnetic exchange coupling of the sample with T=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 °C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions. [ABSTRACT FROM AUTHOR]

In the original article some funding information in the Acknowledgements section was inadvertently omitted. Following is the corrected text. [ABSTRACT FROM AUTHOR]

Abstract: We investigated the carrier transition properties of the GaN/InGaN/GaN single quantum well bounded by AlGaN barriers. In order to confirm the carrier transition coming from the single quantum well, the single quantum well layer was etched by reactive ion etching method. The structural property of the samples was characterized by high resolution X-ray diffraction measurements. In micro-photoluminescence measurements, it is clearly shown that the donor bound exciton transition of the single quantum well sample was redshifted compared to the etched one due to strain. Moreover, a lot of peaks were observed below the GaN band gap energy due to carrier localization in the InGaN/GaN single quantum well, including carrier localization center and quantum confined states. The excitation power dependence and time resolved photoluminescence spectra were investigated to characterize the optical transition of the single quantum well. [Copyright &y& Elsevier]