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Quantum Hall and magneto-photoluminescence (magneto-PL) measurements are simultaneously performed on a GaAs quantum well to establish a detailed correlation between magneto-optical and magneto-transport properties of charge carriers. The longitudinal/transverse magneto-resistances under dark and illuminated conditions provide insight into an electron–electron interaction that pushes charge carriers toward the heterointerfaces. It is observed that photogenerated holes screen this interaction potential and annihilate the accumulation of electrons in the ground energy state. In this process, carriers from excited states are redistributed in lower energy sub-bands, which affect the quantum scattering time of carriers. In particular, the scattering time associated with an excited state is significantly reduced as compared to the ground state. Under this condition, the redistribution of charges among Landau states is probed by the magneto-PL measurements. Also, magneto-PL spectroscopy is used to estimate recombination time, carrier occupancy in Landau states, and Fermi energy as a function of a magnetic field. In our previous work [J. Lumin. 206, 342 (2019)], it was demonstrated that a variation in the strength/orientation of a magnetic field can control the recombination and separation of charges, where the PL spectra under a parallel magnetic field help to acquire anisotropic properties of charge carriers. Here, a similar method is used to estimate the anisotropic properties of carriers under an external electric field and then correlated with that obtained from quantum Hall measurements during illumination. Furthermore, a new method to record magneto-PL intensity oscillations is described, which can be used to realize magneto-optical properties of carriers without any line-shape fitting procedure. [ABSTRACT FROM AUTHOR]

The effect of the magnetic field on radiative and non-radiative mechanisms of charge carriers in GaAs/AlGaAs quantum wells (QWs) is investigated via quasi-simultaneous magneto-photoluminescence (PL) and magneto-surface photo-voltage (SPV) spectroscopy. At low-temperature, the luminescence intensity of ultra-low disordered GaAs/AlGaAs QWs generally increases under strong magnetic perturbation. Even at relatively high-temperature (100K), the magnetic field driven enhancement of PL intensity is observed for thick QWs. On the other hand, it is found that the PL intensity of narrow QWs gradually decreases under a strong magnetic field at 100 K. The magnetic field driven enhancement (suppression) of radiative recombination efficiency for wide (narrow) QWs is investigated by considering the oscillator strength, thermal effects, and carrier re-distribution in energy states. Also, the charge carriers which escape from narrow QWs or are captured by interface defects are probed via magneto-SPV measurements. Radiative recombination and thermionic emission of charge carriers, investigated by magneto-PL and magneto-SPV spectroscopy, provide a clear guideline of the critical QW width which would be essential for magnetic field driven hightemperature operation of advanced emission based-devices. [ABSTRACT FROM AUTHOR]

The effect of the magnetic field on radiative and non-radiative mechanisms of charge carriers in GaAs/AlGaAs quantum wells (QWs) is investigated via quasi-simultaneous magneto-photoluminescence (PL) and magneto-surface photo-voltage (SPV) spectroscopy. At low-temperature, the luminescence intensity of ultra-low disordered GaAs/AlGaAs QWs generally increases under strong magnetic perturbation. Even at relatively high-temperature (100 K), the magnetic field driven enhancement of PL intensity is observed for thick QWs. On the other hand, it is found that the PL intensity of narrow QWs gradually decreases under a strong magnetic field at 100 K. The magnetic field driven enhancement (suppression) of radiative recombination efficiency for wide (narrow) QWs is investigated by considering the oscillator strength, thermal effects, and carrier re-distribution in energy states. Also, the charge carriers which escape from narrow QWs or are captured by interface defects are probed via magneto-SPV measurements. Radiative recombination and thermionic emission of charge carriers, investigated by magneto-PL and magneto-SPV spectroscopy, provide a clear guideline of the critical QW width which would be essential for magnetic field driven high-temperature operation of advanced emission based-devices. [ABSTRACT FROM AUTHOR]

The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells (QWs) is investigated. Three sets of high-mobility InGaAs QW structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the QW, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in QW by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology. [ABSTRACT FROM AUTHOR]

A general method based on the valence band mixing is proposed to establish a correlation between electron spin polarization and the degree of circular polarization of luminescence in a strained quantum well (QW). Key issues that are critical for establishing such a correlation are highlighted by invoking 4 band k.p calculations in a strained QW system. The proposed method takes care of the complex valence band mixing in strained QWs by simultaneously analyzing the heavy hole (e-hh) and light hole (e-lh) related luminescence transitions along the quantization direction. It is shown that the ratio of the degree of circular polarizations measured for the e-hh and e-lh features is a sensitive probe to estimate the values of band mixing. The method is reasonably supported by carefully conducted experiments on a tensile strained GaAsP/AlGaAs QW sample in the temperature range of 10 to 150 K. The proposed method shall be helpful for understanding the spin injection/transfer across the interfaces of QW, especially for the cases where heavy hole-light hole coupling is expected to be strong, and both the features are experimentally observed. It might lead to new directions in the field of semiconductor spin-optoelectronics in QWs. [ABSTRACT FROM AUTHOR]

Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images. [ABSTRACT FROM AUTHOR]

InAsxP1-x/InP quantum wells (QWs) with excellent crystalline and interfacial quality are grown by metal organic vapor phase epitaxy as confirmed from the cross-sectional transmission electron microscopy, high resolution x-ray diffraction and photoluminescence measurements. The electron confinement in InAsxP1-x/InP QW states is determined by capacitance voltage measurements, where we find that the electron accumulation increases with increasing QWs thickness and arsenic composition. This is explained by the variation of the band offset and hence the effective change in the position of the electronic energy level from Fermi level with QWs composition and thickness. The conduction band offset (ΔEc) for InAsxP1-x/InP QWs has been obtained by solving the self consistent set of Schrodinger and Poisson equations and fitting the theoretical carrier density profile with the apparent carrier density measured from experiments. The ΔEc values in strained InAsxP1-x/InP QWs have been obtained which fits to the expression ΔEc(x) = 402-350(1-x)meV for 0.38

Temperature dependence of the photoluminescence (PL) peak energy of bulk and quantum well (QW) structures is studied by using a new phenomenological model for including the effect of localized states. In general an anomalous S-shaped temperature dependence of the PL peak energy is observed for many materials which is usually associated with the localization of excitons in band-tail states that are formed due to potential fluctuations. Under such conditions, the conventional models of Varshni, Viña and Passler fail to replicate the S-shaped temperature dependence of the PL peak energy and provide inconsistent and unrealistic values of the fitting parameters. The proposed formalism persuasively reproduces the S-shaped temperature dependence of the PL peak energy and provides an accurate determination of the exciton localization energy in bulk and QW structures along with the appropriate values of material parameters. An example of a strained InAs0.38P0.62/InP QW is presented by performing detailed temperature and excitation intensity dependent PL measurements and subsequent in-depth analysis using the proposed model. Versatility of the new formalism is tested on a few other semiconductor materials, e.g. GaN, nanotextured GaN, AlGaN and InGaN, which are known to have a significant contribution from the localized states. A quantitative evaluation of the fractional contribution of the localized states is essential for understanding the temperature dependence of the PL peak energy of bulk and QW well structures having a large contribution of the band-tail states. [ABSTRACT FROM AUTHOR]

The investigation of electron-phonon coupling in near surface GaAs1-xPx/AlyGa1-yAs quantum well structures using wavelength and intensity dependent Raman spectroscopy shows that in the near surface quantum well case, coupled modes are situated at the frequency between longitudinal optical (LO) and transverse optical phonons of GaAsP, which is forbidden for the coupled electron-phonon modes in the bulk ternary alloy. The observed 'GaAs like' and 'GaP like' LO phonon-intersubband plasmon coupled mode frequencies decrease with increase in carrier density. These results corroborate well with the theoretical calculation for variation of two dimensional electron gas-phonon coupling with carrier density in ternary alloys. [ABSTRACT FROM AUTHOR]

The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs especially the cube root dependence of blueshift in the lowest excitonic transition energy on excitation power in photoluminescence measurements indicates that the observed luminescence is originating from spatially separated electrons and holes. Such a blueshift is seen to increase with the QW thickness again confirming a type-II band alignment. A direct evidence of electron confinement in the conduction band of InP is provided by the capacitance voltage measurements. [ABSTRACT FROM AUTHOR]

Quantum states in InP/GaAs type-II ultrathin quantum wells (QWs) are investigated through temperature dependent capacitance-voltage (C-V) measurements. We observe a well-defined peak in the apparent carrier density (ACD) profile for the ultrathin QWs at low temperatures in the vicinity of QWs. ACD peak value is found to decrease with the reduction in QW thickness, indicating quantum confinement effect. Decrease in the ACD peak value and increase in its width with increasing temperature confirms that the observed peak in the ACD profiles is related to the two dimensional electrons occupying the quantum states formed in the ultrathin QWs. We do not observe appreciable peak shift in ACD profiles with temperature, which is attributed to the less temperature dependence of the Debye length because of the high doping density used in the barrier region of InP/GaAs ultrathin QWs. We determine a strained value of 180 ± 30 meV for the conduction band discontinuity by simulating the C-V profile through the self-consistent solution of Schrodinger and Poisson equations for InP/GaAs ultrathin QW. [ABSTRACT FROM AUTHOR]