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We report the effect of V-shaped pit size, inverted hexagonal pits embedded in InGaN multiple quantum well, on the reverse leakage current of InGaN light-emitting diodes (LEDs). It was found that the reverse leakage current of InGaN LEDs with larger V-shaped pits is significantly reduced from 1.80 mA down to 3.84 nA at -30~V by several orders of magnitude. We claim that this improvement is accounted for increased Poole-Frenkel barrier height of carrier trapped at the deep centers via enlarged V-pit formation, consequently resulting in lower reverse current of InGaN LEDs. [ABSTRACT FROM AUTHOR]

We report the characteristics of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) grown on Si (111) substrate. Temperature-variable current-voltage (I-V) measurement from 80 K to 400 K reveals that forward current regimes can be distinguished by corresponding slopes in semi-logarithmic plot, which are associated with different forward conduction mechanisms of InGaN LED. Temperature-insensitive tunneling behavior appears to be dominant at low current injection regime for InGaN LEDs on Si. Conductive atomic force microscopy analysis indicates that V-pits associated with threading dislocations could be main leakage path of forward tunneling current of InGaN LED on Si. [ABSTRACT FROM AUTHOR]