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In the present work, colloidal cerium oxide nanoparticles (nanoceria) and graphene quantum dots (GQDs) were firstly synthesized by sol-gel method and pyrolysis respectively, which all have a uniform nano-size and significant fluorescence emission. Due to the fluorescence emission spectrum of nanoceria overlapped the absorption spectrum of GQDs, fluorescence resonance energy transfer (FRET) between nanoceria and GQDs could occur effectively by the electrostatic interaction. Based on it, a sensitive ratiometric fluorescence aptasensor for the determination of ochratoxin A (OTA), a small molecular mycotoxin produced by Aspergillus and Penicillium strains, has been successfully constructed. In which, probe DNA1@nanoceria and DNA2@GQD were designed to complementary with OTA aptamer, both could adsorb each other, leading to the occur of FRET. After adding of OTA aptamer and then introducing of OTA, the FRET would be interrupted/recovered due to the specific affinity of OTA and its aptamer, the fluorescence recovery value would increase with the addition of OTA. Under the optimal experimental conditions (pH 7, m GQD/nanoceria 2, c aptamer 100 nM, incubation time 30 min), the constructed ratiometric fluorescence aptasensor exhibited a satisfying linear range (0.01-20 ng mL -1 ), low limit of detection (2.5 pg mL -1 ) and good selectivity towards OTA, and has been successfully applied for the analysis of real sample peanuts with good accuracy of the recoveries ranged from 90 to 110%., (Copyright © 2017 Elsevier B.V. All rights reserved.)

The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters. [ABSTRACT FROM AUTHOR]

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future. [ABSTRACT FROM AUTHOR]

Chiral quantum optics has attracted considerable interest in the field of quantum information science. Exploiting the spin‐polarization properties of quantum emitters and engineering rational photonic nanostructures has made it possible to transform information from spin to path encoding. Here, compact chiral photonic circuits with deterministic circularly polarized chiral routing and beamsplitting are demonstrated using two laterally adjacent waveguides coupled with quantum dots. Chiral routing arises from the electromagnetic field chirality in waveguide, and beamsplitting is obtained via the evanescent field coupling. The spin‐ and position‐dependent directional spontaneous emission are achieved by spatially selective micro‐photoluminescence measurements, with a chiral contrast of up to 0.84 in the chiral photonic circuits. This makes a significant advancement for broadening the application scenarios of chiral quantum optics and developing scalable quantum photonic networks. [ABSTRACT FROM AUTHOR]

Featured Application: optical communication, silicon photonics. Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration. [ABSTRACT FROM AUTHOR]