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Photonic devices based on perovskite materials are considered promising alternatives for a wide range of these devices in the future because of their broad bandgaps and ability to contribute to light amplification. The current study investigates the possibility of improving the light amplification characteristics of CsPbBr3 perovskite quantum dot (PQD) films using the surface encapsulation technique. To further amplify emission within a perovskite layer, CsPbBr3 PQD films were sandwiched between two transparent layers of poly(methyl methacrylate) (PMMA) to create a highly flexible PMMA/PQD/PMMA waveguide film configuration. The prepared perovskite film, primed with a polymer layer coating, shows a marked improvement in both emission efficiency and amplified spontaneous emission (ASE)/laser threshold compared with bare perovskite films on glass substrates. Additionally, significantly improved photoluminescence (PL) and long decay lifetime were observed. Consequently, under pulse pumping in a picosecond duration, ASE with a reduction in ASE threshold of ~1.2 and 1.4 times the optical pumping threshold was observed for PQDs of films whose upper face was encapsulated and embedded within a cavity comprising two PMMA reflectors, respectively. Moreover, the exposure stability under laser pumping was greatly improved after adding the polymer coating to the top face of the perovskite film. Finally, this process improved the emission and PL in addition to enhancements in exposure stability. These results were ascribed in part to the passivation of defects in the perovskite top surface, accounting for the higher PL intensity, the slower PL relaxation, and for about 14 % of the ASE threshold decrease. [ABSTRACT FROM AUTHOR]

The current work examines the effects of cesium lead bromide (CsPbBr3) perovskite quantum dots (PQDs) on the structural and optical properties of conjugated polymer blends of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH–PPV) and poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). MEH–PPV/PFO composite thin-films containing PQDs with weight ratios between 0.5 wt.% and 10 wt.% were prepared via a solution-blending method prior to spin-coating on glass substrates. The MEH–PPV/PFO composites' crystallinity was improved, and the roughness was dramatically increased with higher PQDs content, as confirmed by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Conversely, a higher PQDs content resulted in a gradual reduction of the Urbach tail and an increase in the steepness parameter, thereby reducing the localized density of the electronic states within the forbidden bandgap of the hybrids. Moreover, a slight reduction in the direct and indirect bandgaps was found in PQDs/(MEH–PPV/PFO) composite films containing a higher PQDs content and provided evidence of the low concentration of the localized states. The incorporation of the PQDs resulted in enhanced non-radiative energy transfer processes in the MEH–PPV/PFO hybrids, which are very important for the development of optimized optoelectronic devices. [ABSTRACT FROM AUTHOR]

The triplet energy transfer mechanism of novel poly(9,9-di-n-octylflourenyl-2,7-diyl) (PFO)/poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/CsPbBr3 perovskite quantum dot (PQD) hybrid thin films was comprehensively investigated. The concentrations of PFO and MEH-PPV in all the specimens were fixed, while the PQD content was varied with various weight ratios and premixed by a solution blending method before it was spin-coated onto glass substrates. The triplet non-radiative Förster resonance energy transfers (FRETs) in the PFO/MEH-PPV/PQDs ternary blend, the dual FRET from PFO to both PQDs and MEH-PPV, and the secondary FRET from PQDs to MEH-PPV were observed. The values of the Förster radius (Ro) of FRET from PFO to MEH-PPV in the presence of various PQD contents (Case I) increased from 92.3 to 104.7 Å, and they decreased gradually from 68.0 to 39.5 Å for FRET from PFO to PQDs in the presence of MEH-PPV (Case II). These Ro values in both cases confirmed the dominance of FRET in ternary hybrid thin films. Upon increasing the PQD content, the distance between the donor and acceptor molecules (RDA) and the conjugation length (Aπ) in both cases gradually decreased. The small values of Ro, RDA, and Aπ with a decrease in the energy transfer lifetime (τET) due to an increase in the PQD contents in both Cases I and II confirmed the efficient FRET in the hybrid. To prevent intermolecular transfer in PFO, the concentrations of MEH-PPV (Case I) and PQDs (Case II) should be decreased to a range of 0.57–0.39 mM and increased in the range of 1.42–7.25 mM. [ABSTRACT FROM AUTHOR]

Amplified spontaneous emission (ASE) threshold in CsPbBr 3 quantum dot films is systematically reduced by introducing high quality TiO 2 compact layer grown by atomic-layer deposition. Uniform and pinhole-free TiO 2 films of thickness 10, 20 and 50 nm are used as a substrates for CsPbBr 3 quantum dot films to enhance amplified spontaneous emission performance. The reduction is attributed indirectly to the improved morphology of TiO 2 compact layer and subsequently CsPbBr 3 active layer as grown on better quality substrates. This is quantified by the reduced roughness of the obtained films to less than 5 nm with 50 nm TiO 2 substrate. Considering the used growth method for the quantum dot film, the improved substrate morphology maintains better the structure of the used quantum dots in the precursor solution. This results in better absorption and hence lower threshold of ASE. Besides that, the improved film quality results further in reducing light scattering and hence additional slight optical enhancement. The work demonstrates a potential venue to reduce the amplified spontaneous emission threshold of quantum dot films and therefore enhanced their optical performance. [ABSTRACT FROM AUTHOR]