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Cerium-doped MoO3 thin films were grown through spray pyrolysis using (NH4) 6Mo7O 24 4H2O 0.1 M solution. The doping was performed by adding 0.1M CeCl3.7H2O, in a ratio of 2% by volume. X-ray and Auger electron spectra show of Ce incorporation in MoO3 thin film. X-ray diffraction showed that Cerium insertion destroys the α-MoO3 structure observed in undoped films. The electrochemical properties were studied using the cyclic voltammetry technique with -400 to 400 mV and scanning speeds from 16 to 144 mV/s. It was established that the diffusion coefficient varies from 1.06 x 10-10 cm²/s for the undoped film to 3.49 x 10 cm²/s for doped film. This suggests that the doped film favors ion exchange processes. The optical transmittance in the range of 290-2500 nm showed that the light transmission of the film doped with Cerium is higher by 10% compared to the undoped film. [ABSTRACT FROM AUTHOR]

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