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In this research, antimony doped ZnO (SZO) thin films with various doping content have been grown on a c-Al 2 O 3 substrate by pulsed laser deposition. The effect of the applied electric field on the bandgap of SZO thin films was studied by electroreflectance (ER) spectroscopy using a capacitor-type geometry. Hall effect measurements indicate that the p-type conductivity of SZO is realized for the Sb 2 O 3 weight percentage at 2%. The blue shift of the energy bandgap was observed in thin films after increasing the doping concentration. The Burstein-Moss effect is the crucial mechanism for the blue shift of the SZO bandgap. Furthermore, we found the red shift of bandgap in all samples, which was measured under various electric fields by ER spectroscopy. The changes of the optical transition in the band structure should be the origin of the red shift behaviors of the SZO bandgap under the presence of the electric field. Based on our results, we can design and optimize the bandgap of SZO for optoelectronic devices. • Burstein-Moss effect on the bandgap revealed by Electroreflectance (ER). • Effect of electric field on the bandgap of Sb doped ZnO thin film was investigated. • Red shifts in the bandgap of Sb doped ZnO thin film under the increment of the electric field. • The bandgap comparison of the Tauc plot method and the Electroreflectance technique. [ABSTRACT FROM AUTHOR]

Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance. • AZO films as transparent electrode are successfully fabricated via pulsed laser deposition. • Systematic investigations on morphology, crystal structure and chemical composition of AZO films are demonstrated. • Suppression of the re-sputtering effect via laser fluence control is important to avoid Al vanishment in AZO films. • AZO film obtained from low laser fluence is effectively employed as transparent electrode in electrochromic device. [ABSTRACT FROM AUTHOR]