Search

Dynamically-tunable impedance matching is a key feature in numerous radio-frequency (RF) applications at high frequencies (10 s of MHz) and power levels (100s–1000 s of Watts and above). This work develops techniques that enable the design of high power tunable matching networks (TMN) that can be tuned orders of magnitude faster than with conventional tunable impedance matching techniques, while realizing the high power levels required for many industrial applications. This is achieved by leveraging an emerging technique – known as phase-switched impedance modulation (PSIM), which involves switching passive elements at the rf operating frequency – that has previously been demonstrated at rf frequencies at up to a few hundred Watts. In this paper, we develop design approaches that enable it to be practically used at up to many kilowatts of power at frequencies in the 10 s of MHz. A detailed analysis of the factors affecting the losses as well as the tradeoffs of a basic PSIM-based element is provided. Furthermore, it is shown how incorporating additional stages to the PSIM-based element, including impedance scaling and / or the addition of series or shunt passive elements, influences the losses and enables the efficient processing of high power levels given the limitations of available switches. A PSIM-based TMN that matches load impedances to 50 $\,\Omega$ and delivers up to 1.5 kW of power at frequencies centered around 13.56 MHz is implemented and tested over a load impedance range suitable for various industrial plasma processes.

Industrial radio frequency (rf) power applications, such as plasma generation, require high-frequency rf power over a wide dynamic power range and across variable load impedances. It is desired in these applications to maintain high efficiency and fast dynamic response. This paper introduces a scalable power amplifier (PA) architecture and control approach suitable for such applications. This approach, which we refer to as Multi-Inverter Discrete Backoff (MIDB), losslessly combines the outputs of paralleled switched-mode PAs, and modulates the number of active PAs to provide discrete steps in rf output voltage. It further employs outphasing among sub-groups of PAs for rapid and continuous output power control over a wide range. In doing so, the architecture can maintain high efficiency and fast rf power control across a very wide backoff range. A device selection and loss optimization method for MIDB architectures is discussed for plasma generation applications. We address the use of GaN FET-based, ZVS class-D PA units, and consider dynamic R[subscript ds],on effects and C[subscript oss] losses typical of GaN FETs.

Plasma generation systems represent a particularly challenging load for radio-frequency power amplifiers owing to the combination of high operating frequency (e.g., 13.56 MHz) and highly variable load parameters. We introduce a dynamic matching system for inductively coupled plasma (ICP) generation that losslessly maintains near-constant driving point impedance (for low reflected power) across the entire plasma operating range. This new system utilizes a resistance compression network (RCN), an impedance transformation stage, and a specially configured set of plasma drive coils to achieve rapid adjustment to plasma load variations. As compared to conventional matching techniques for plasma systems, the proposed approach has the benefit of relatively low cost and fast response, and does not require any moving components. We describe suitable coil geometries for the proposed system, and treat the design of the RCN and matching stages, including design options and tradeoffs. A prototype system is implemented and its operation is demonstrated with low pressure ICP discharges with O $_{2}$ , C $_{4}$ F $_{8}$ , and SF $_{{6}}$ gases at 13.56 MHz and over the entire plasma operating range of up to 250 W.

Single-Switch inverters such as the conventional Class-E inverter are often highly load sensitive, and maintain zero-voltage switching over only a narrow range of load resistances. This paper introduces a design methodology that enables rapid synthesis of Class E and related single-switch inverters that maintain ZVS operation over a wide range of resistive loads. We treat the design of Class-E inverters for variable resistance operation and show how the proposed methodology relates to circuit transformations on traditional Class-E designs. We also illustrate the use of this transformation approach to realize Φ[subscript 2] inverters for variable-resistance operation. The proposed methodology is demonstrated and experimentally validated at 27.12 MHz in a Class E and Φ[subscript 2] inverter designs that operate efficiently over 12:1 load resistance range for an 8:1 and 10:1 variation in output power, respectively, and a 25-W peak output power., Massachusetts Institute of Technology. Center for Integrated Circuits and Systems, MIT Energy Initiative, Skolkovo Institute of Science and Technology, Warsaw University of Science and Technology (Poland). Center for Advanced Studies

Plasma generation systems represent a particularly challenging load for radio-frequency power amplifiers owing to the combination of high operating frequency (e.g., 13.56 MHz) and highly variable load parameters. We introduce a dynamic matching system for Inductively Coupled Plasma (ICP) generation that losslessly maintains near-constant driving point impedance (minimal reflected power) across the entire plasma operating range. This new system utilizes a Resistance Compression Network (RCN), an impedance transformation stage, and a specially-configured set of plasma drive coils to achieve rapid adjustment to plasma load variations. As compared to conventional matching techniques for plasma systems, the proposed approach has the benefit of relatively low cost and fast response, and does not require any moving components. We describe suitable coil geometries for the proposed system, and treat the design of the RCN and matching stages, including design options and tradeoffs. A prototype system is implemented and its operation is demonstrated with low pressure ICP discharges with O 2 , C 4 F 8 , and SF 6 gases at 13.56 MHz and over the entire plasma operating range of up to 250 W.