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1. Influence of sulfide treatment of profiled-interface Au–GaAs Schottky diodes on the polariton peak of the photoresponse.

Author

Dmitruk, M. L., Maeva, O. I., Mamykin, S. V., and Yastrubchak, O. B.

Subjects
*SCHOTTKY barrier diodes, *POLARITONS, *SEMICONDUCTORS
Abstract

We discuss the feasibility of controlling the photosensitivity of metal/thin intrinsic-oxide/ semiconductor surface-barrier structures under conditions of excitation of surface polaritons. These structures may be used as polarization-sensitive photodetectors. [ABSTRACT FROM AUTHOR]

Published
1997
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