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Studies the interactions between end-of-range dislocation loops and {311} defects as a function of their proximity. Variation of the depth of the loop layer from the surface; Annealing of the wafers; Decrease in the number of interstitial {311} defects as the projected range damage was brought closer to the loop layer; Increase in the number of rectangular elongated defects.

Examines the influence of titanium silicide formation on native silicon point defects. Use of doping superlattices to trace point defect behavior; Enhancement in antimony diffusion; Retardation of boron diffusion over control samples; Mechanisms of vacancy supersaturation and interstitial depletion.

Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) represent a rapidly maturing technology plagued by reliability issues which are not well understood. One such issue is the relationship between gate leakage and the formation of reaction-based defects at the interface between the gate metal and the underlying epitaxial semiconductor layers. Here, the combination of chemical etching-based deprocessing and top-down scanning electron microscopy (SEM) to identify and quantify defects formed between the gate and the epitaxial layers of HEMTs with Ni gates is presented. This approach is used to demonstrate a direct relationship between gate leakage current density during off-state stressing and the percentage of gate contact area consumed by reaction-based defects in HEMTs with 100nm and 1.0μm gate lengths. [Copyright &y& Elsevier]