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Amorphous silicon oxynitride (a-SiN[sub x]O[sub y]) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, which was carried out with variation in the nitrogen-flow-rate ratio (R[sub N]) and the oxygen-flow-rate ratio (R[sub O]) to control the nitrogen and oxygen contents, x and y, respectively. Changes in the structural properties and the characteristics of defects in the films were examined based on the electron spin resonance as well as infrared and optical absorption measurements. An increase in either R[sub N] or R[sub O] was found to decrease the deposition rate, the density of charged or neutral defects, and the randomness of the bonding network. Thus the incorporation of O or N atoms into Si nitride or Si oxide films, respectively, acts to improve the qualities of the insulating films. Furthermore, the nearest N and O atom neighboring to a Si site would be randomly bonded to the Si atom. Our results also showed that N-related dangling bonds, other than so-called K centers, are favorably created after annealing, but that the formation of Si-O bonds in the films makes the formation of such defects difficult. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study of the crystal structure and the bonding configurations of Si[sub1-x]C[subx] films prepared by plasma-enhanced chemical vapor deposition. Description of cubic silicon carbide; X-ray diffraction pattern on the films; Classification of films according to the composition.

Abstract: The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300°C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈110〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. [Copyright &y& Elsevier]

Abstract: The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300°C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈110〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. [Copyright &y& Elsevier]