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Continuous downscaling of integrated circuits brought an end to the era of SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One of the challenges in the integration of the high-k material is removal of those materials selectively over the substrate. This work is one of the first attempts to review current state of the art of the high-k removal. Two main approaches are discussed: dry (plasma) removal and wet removal. First, the fundamentals and limitations of both approaches are presented, then an overview of the existing experimental data is given. It is concluded that the best results could be obtained by combining the dry and wet approaches. [ABSTRACT FROM AUTHOR]

The role of plasma etching in the semiconductor technology upon switching from the microscale to the nanoscale dimensions is discussed. The continuing miniaturization has led to impossibility of simple scaling and further use of the conventional materials of silicon microelectronics. New materials and functional elements of integrated circuits call for revision of the existing plasma etching processes and development of novel processes. This situation brings plasma etching along with photolithography to the forefront of nanoelectronics technology. [ABSTRACT FROM AUTHOR]

Abstract: This work proposes an extended model that describes the propagation of damage in porous low-k material exposed to a plasma. Recent work has indicated that recombination and diffusion play a more dominant role than VUV light in oxygen plasma induced damage. Especially at low depths, the radical concentration is determined by the number of radicals that disappear back into the plasma while the final depth of damage is defined by recombination of oxygen atoms. A logarithmic equation has been proposed to describe the behavior as a function of time. In this work this equation is extended to take diffusion into account, next to recombination. The results are in agreement with experimental data and one-dimensional random walk theory calculations. [Copyright &y& Elsevier]